2017
DOI: 10.1007/s00339-017-1493-1
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Fabrication and characterization of multi-layer InAs/InGaAs quantum dot p-i-n GaAs solar cells grown on silicon substrates

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Cited by 4 publications
(1 citation statement)
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“…The solid and dotted lines represent the best fits to standard critical-point line shapes, derived from: . The fit is performed simultaneously for the real and imaginary parts of d 2 ε/dω 2 using a least-squares procedure 48 , 49 . If the angle Ф in the phase factor take values, which are integer multiples of π/2, the line shape corresponds to transitions between uncorrelated one-electron bands while noninteger multiples are usually believed to include excitonic effects by allowing a mixture of two CP integer multiple line shapes.…”
Section: Resultsmentioning
confidence: 99%
“…The solid and dotted lines represent the best fits to standard critical-point line shapes, derived from: . The fit is performed simultaneously for the real and imaginary parts of d 2 ε/dω 2 using a least-squares procedure 48 , 49 . If the angle Ф in the phase factor take values, which are integer multiples of π/2, the line shape corresponds to transitions between uncorrelated one-electron bands while noninteger multiples are usually believed to include excitonic effects by allowing a mixture of two CP integer multiple line shapes.…”
Section: Resultsmentioning
confidence: 99%