Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Haug, Franz‐Josef; Libraro, Sofia; Lehmann, Mario; Morisset, Audrey; Ingenito, Andrea; Ballif, Christophe

doi:10.1016/j.solmat.2022.111647

Cited by 4 publications

(3 citation statements)

References 22 publications

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“…This could indicate that the homogeneity of the thin SiO x layer at the interface starts being compromised. In a recent study, we observed the degradation of the surface passivation of similar samples with the increase in firing dwell-time, with a more pronounced degradation for dwell-times superior to 30 s . This is in good agreement with the present XRR investigations and confirms that the vanishing of the fringes is linked to the breakup of the thin SiO x along the interface.…”

Section: Discussionsupporting

confidence: 92%

“… 32 We note that for this type of symmetrical samples made from shiny-etched FZ c-Si wafers, we observed the formation of shallow electronic defect states in the bulk c-Si limiting the effective lifetime at first order under certain conditions (and thus leading to underestimation of the surface passivation properties provided by our poly-Si contact). For further details on this matter, the interested reader is referred to ref ( 42 ).…”

Section: Discussionmentioning

confidence: 99%

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In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Morisset

Famprikis

Haug

et al. 2022

ACS Appl. Mater. Interfaces

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The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiO x ) layer has been identified as the next step to further increase the conversion efficiency of current mainstream crystalline silicon (c-Si) solar cells. However, the interrelation between the final properties of poly-Si/SiO x contacts and their fabrication process has not yet been fully unraveled, which is mostly due to the challenge of characterizing thin-film stacks with features in the nanometric range. Here, we apply in situ X-ray reflectometry and diffraction to investigate the multiscale (1 Å–100 nm) structural evolution of poly-Si contacts during annealing up to 900 °C. This allows us to quantify the densification and thinning of the poly-Si layer during annealing as well as to monitor the disruption of the thin SiO x layer at high temperature >800 °C. Moreover, results obtained on a broader range of thermal profiles, including firing with dwell times of a few seconds, emphasize the impact of high thermal budgets on poly-Si contacts’ final properties and thus the importance of ensuring a good control of such high-temperature processes when fabricating c-Si solar cells integrating such passivating contacts. Overall, this study demonstrates the robustness of combining different X-ray elastic scattering techniques (here XRR and GIXRD), which present the unique advantage of being rapid, nondestructive, and applicable on a large sample area, to unravel the multiscale structural evolution of poly-Si contacts in situ during high-temperature processes.

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Section: Discussionsupporting

confidence: 92%

Section: Discussionmentioning

confidence: 99%

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Morisset

Famprikis

Haug

et al. 2022

ACS Appl. Mater. Interfaces

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“…A layer of in-situ p-type SiCx and an interfacial oxide formed in hot HNO3 were used as the passivating contacts as illustrated by the F-J Haug et al [11] investigation into the quick thermal processing of p-type silicon. Starting at 450 o C, the firing process generates a sizable number of shallow mass defects in the beneath FZ silicon, which transition into the defect curing phase for firing temperature of 800 o C and higher.…”

Section: Literature Surveymentioning

confidence: 99%

Rapid Adaptation of Renewable Energy – A Review on Solar Energy, Types and Overview

Meena¹

2022

RRRJ

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Renewable energy is derived from the sources that can be renewed naturally. The majority of renewable energy sources obtained from sunlight, wind, water currents, and geothermal heat, are sustainable. Solar energy, wind energy, hydropower, geothermal energy, and other forms of renewable energy utilize a variety of methods to generate renewable resources. The sun has the potential to meet the entire world's energy requirements. Solar energy has the capacity to be efficiently and economically converted into electricity by remaining as a renewable energy source. This article will explain about the solar energy, its overview, evolution, different forms, advantages, and disadvantages.

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Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Lehmann

Desthieux

Valle

et al. 2022

IEEE J. Photovoltaics

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In this work, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation investigated. It is found that the firing step at 800 °C induces shallow bulk defects in Float-Zone (FZ) silicon wafers, which can subsequently be passivated with hydrogen provided by an a-SiNx:H/D reservoir layer upon annealing at 450 °C. Experimental results and numerical data treatment indicate a rapid passivation of the surface within less than 1 min, followed by a slower passivation of the shallow bulk defects. In situ lifetime measurements are consistent with a slow bulk lifetime improvement by showing similar lifetime evolutions for both p-type and n-type SiCx layers. The kinetics of the hydrogenation process seems to be limited by the available hydrogen supply at the c-Si/SiOx interface, rather than by its diffusion within the bulk of the wafer. Moreover, it is affected by the bulk doping, as well as the SiCx layer thickness. Finally, it is shown that hydrogenation is also possible with an a-SiNx:H/D reservoir layer deposited on one side of the wafer only, although resulting in a lower passivation level (τeff ~700 μs compared to τeff ~1300 μs for symmetrical samples), and slower kinetics (τreac ~5 min compared to τreac ~0.8 min).

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Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Cited by 4 publications

References 22 publications

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Rapid Adaptation of Renewable Energy – A Review on Solar Energy, Types and Overview

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

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