Impact of oxygen flow rate on performance of indium-tin-oxide-based RRAMs

Tsai, Tsung‐Ming; Tan, Yung‐Fang; Wu, Cheng-Hsien; Yang, Ching‐Chieh; Chen, Wen-Chung; Lin, Chun-Chu; Wu, Po Kuei; Zhang, Yong‐Ci; Chou, Sheng‐Yao; Chen, Ziyu; Lin, Tzu-Heng

doi:10.1088/1361-6463/abf576

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…This is clearly identified by EDXS of a TEM lamella, as discussed in Subsection . In general, the resulting resistivity of ITO layers is a complex interplay of processing parameters and chemical element ratios (especially oxygen vacancies), − and its reasoning is beyond the scope of the present manuscript. The layer thickness d and resistivity ρ ( E ) derived from ellipsometry, together with the resistance measured by 4-wire sensing, are summarized in Table .…”

Section: Results and Discussionmentioning

confidence: 99%

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Minenkov,

Hollweger,

Duchoslav

et al. 2024

ACS Appl. Mater. Interfaces

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Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity.

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Section: Results and Discussionmentioning

confidence: 99%

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Minenkov,

Hollweger,

Duchoslav

et al. 2024

ACS Appl. Mater. Interfaces

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“…Resistive switching has been observed in transition-metal oxides (TMO), such as zinc, tantalum, and tungsten oxides [ 28 , 29 , 30 ]. In particular, tungsten oxide is a compatible material with CMOS technology [ 31 ], making it easier to integrate RRAM into the existing back-end-of-line Si technologies. Each TMO used in the switching layer exhibits various characteristics.…”

Section: Introductionmentioning

confidence: 99%

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

et al. 2023

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In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.

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Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Cho,

Heo,

Kim

et al. 2023

Surfaces and Interfaces

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Impact of oxygen flow rate on performance of indium-tin-oxide-based RRAMs

Cited by 4 publications

References 25 publications

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

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