Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

Abstract

In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

“…The resistive switching phenomenon is commonly observed in metal oxides such as NiO x , HfO x , AlO x , WO x , and SiO 2 , which are mostly deposited using methods such as atomic layer deposition, reactive sputtering, and the sol–gel process. − Among these, WO x is extensively used in field-effect transistors, photocatalytic sensors, and electrochromic and photochromic devices owing to its high thermal stability, superior optical and electrical properties, and compatibility with the CMOS technology. − Most WO x -based RRAM devices display typical nonvolatile characteristics. In a previous study by Cho et al., a WO x -based RRAM device was used as an artificial synapse based on repetitive potentiation and depression. Additionally, in the study by Lin et al .…”

“…34−37 Most WO x -based RRAM devices display typical nonvolatile characteristics. In a previous study by Cho et al, 38 a WO x -based RRAM device was used as an artificial synapse based on repetitive potentiation and depression.…”

Coexisting firing patterns and circuit design of locally active memristive autapse morris-lecar neuron

“…Since the concept of memristor was put forward by Professor Chua [7] in 1971 to the successful development of physical memristor by HP Labs [8] in 2008, memristor has been put into use in many areas like chaotic circuit [9][10][11][12], image processing [13][14][15][16][17], neural network [18][19][20][21][22][23] and non-volatile memory [24][25][26][27], etc And its bionic function provides a new idea for the study of neurodynamics. The use of memristor to describe the effect of electromagnetic induction on neuronal system can reveal the firing pattern transition and bifurcating mechanism of neuronal system under electromagnetic action [28][29][30][31].…”