Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Cho, Youngboo; Heo, Jungang; Kim, Sungjoon; Kim, Sungjun

doi:10.1016/j.surfin.2023.103273

Surfaces and Interfaces

2023

DOI: 10.1016/j.surfin.2023.103273

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Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Youngboo Cho,

Jungang Heo,

Sungjoon Kim

et al.

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2024

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Cited by 5 publications

References 41 publications

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Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Kim,

Park,

Hong

et al. 2024

Adv Materials Technologies

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There is a need to design a hardware synapse array appropriate for enhancing the efficiency of neuromorphic computing systems while minimizing energy consumption. This study introduces a memristor device with an AlOx overshoot suppression layer (A‐OSL) to achieve a self‐compliance effect. By optimizing each cell within the 16 × 16 crossbar array, synaptic devices are successfully fabricated with reliable characteristics and 3‐bit multilevel capabilities. In addition, the oxygen composition of TiOx and the annealing conditions are optimized to reduce the forming voltage and minimize the variation in the switching voltage. As a result, stable forming‐free characteristics are obtained through A‐OSL insertion, a reduction in forming voltage, and TiOx oxygen composition optimization. Also, target weights are accurately transferred to the A‐OSL memristor crossbar array and conducted the inference process by applying spike signals to the array following the designated time step. The spiking neural network (SNN) is demonstrated by measuring vector‐matrix multiplication (VMM) of the 16 × 16 crossbar array. The VMM results exhibit a classification accuracy of 90.80% for the MNIST dataset, which is close to the accuracy achieved by software‐based approaches, amounting to 91.85%.

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Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Kim,

Park,

Hong

et al. 2024

Adv Materials Technologies

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Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Lee,

Jeon,

Cho

et al. 2024

Adv Materials Technologies

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Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI and neuromorphic computing. Prior research on optimizing memristors in next‐generation devices has generally indicated that emerging arrays and vertical structures can improve memory density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current and forming processes from the initial device in array structure operation at the device level, have limited the development of array‐based memristor devices for further progressing circuits and integrated design. In this paper, memristor array studies are examined that have suggested solutions for sneak path current and forming operation problems at the device level. Ultimately, representative solutions are proposed to progress memristors into array structures by introducing the latest research on one diode‐one RRAM (1D1R), one selector‐one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self‐rectifying cell (SRC), charge trap memory (CTM) and their applications. Additionally, essential details demonstrating the practical implementation of these devices in crossbar array memory are investigated. Finally, the advantages and perspectives of these array‐based memristor solutions are summarized.

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Short-term memory characteristics of TiN/WOX/FTO-based transparent memory device

Kim,

Cho,

Kim

2024

Chinese Journal of Physics

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Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Cited by 5 publications

References 41 publications

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Short-term memory characteristics of TiN/WOX/FTO-based transparent memory device

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Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Cited by 5 publications

References 41 publications

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Short-term memory characteristics of TiN/WOX/FTO-based transparent memory device

Contact Info

Product

Resources

About

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System