Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions

Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Poyai, Amporn; Claeys, Corneel

doi:10.1109/55.852966

Cited by 16 publications

(19 citation statements)

References 12 publications

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“…An analysis of the measured data using the method described in Refs. 51,[60][61][62] shows that trap has a repulsive character due to the very small capture cross-section of 10 À20 cm 2 , and that its activation energy is equal to 0:47 eV. It should be noted that the capture cross-section in the case of the dielectric is typically several orders of magnitude smaller than for the bulk Si material trapping.…”

Section: Random Telegraph Signal Behavior Of Drain Currentmentioning

confidence: 93%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

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Section: Random Telegraph Signal Behavior Of Drain Currentmentioning

confidence: 93%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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“…This effect leads, in particular, to the fact that the center of the electron charge of the inversion layer is located not on the gate surface of the silicon film, but at a certain distance Z C away. In other words, the channel turns out to be displaced into the film interior by the distance Z C , which can reach 2 nm for sufficiently low values of V GF [27]. Such a displacement of the channel could explain the following feature of 1/f noise.…”

Section: /F Noisementioning

confidence: 98%

“…Considering the physical circumstances of the 1/f noise generation in submicron and decananometer MOS transistors, one should also mention the two-dimensional sampling of electrons in the channel [25][26][27][28]. This effect leads, in particular, to the fact that the center of the electron charge of the inversion layer is located not on the gate surface of the silicon film, but at a certain distance Z C away.…”

Section: /F Noisementioning

confidence: 99%

Physics of fluctuation processes in downscaled silicon MOSFETs

Lukyanchikova

Simoen²,

Claeys

2009

Radiophys Quantum El

Self Cite

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Physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs (metal-oxide-semiconductor field-effect transistors) including the ultra-thin film SOI (siliconon-insulator) devices using strained silicon films are reviewed. The review is substantially based on the results obtained by the authors. It is shown that the following drastic changes occur in the nature and parameters of noise in such devices as a result of their downscaling when the gate oxide thickness and the channel length and width are decreased, the SOI substrates are used, the silicon film thickness is reduced, the film doping level is varied, the strained silicon films are employed, etc. Firstly, the Lorentzian components can appear in the current noise spectra. Those components are due to (i) electron tunneling from the valence band through the gate oxide in the SOI MOSFETs of a sufficiently thin gate oxide (LKE-Lorentzians); (ii) Nyquist fluctuations generated in the source and drain regions near the back Si/SiO 2 interface in the SOI MOSFETs (BGI Lorentzians); (iii) electron exchange between the channel and some single trap in the gate oxide of the transistors with sufficiently small length and width of the channel (RTS Lorentzians). Secondly, the 1/f-noise level can increase due to (i) the appearance of recombination processes near the Si/SiO 2 interface activated by the currents of electron tunneling from the valence band; (ii) an increase in the trap density in the gate oxide of the devices fabricated on the biaxially tensile-strained silicon films; (iii) the contribution of the 1/f fluctuations of the current flowing through the gate oxide as a result of electron tunneling from the conduction band. At the same time, the 1/f-noise level may decrease due to a decrease in the trap density in the gate oxide of the transistors fabricated on the uniaxially tensile-strained silicon films. Moreover, a 1/f 1.7 component may appear in the noise spectra for the transistors of a sufficiently thin gate oxide, whose component is due to charge fluctuations on the defects located near the interface between the gate polysilicon and the gate oxide. Thus, the main physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs are considered and it is shown by what physical reasons and how the downscaling of MOSFETs affects their fluctuation characteristics.

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“…Individual charge traps can significantly alter the channel current of nm-sized FETs. At the same time, it has been observed that the capture kinetics of RTS in submicron FETs cannot be described by the wellknown Shockley-Read-Hall model, [1][2][3]8,9 in particular, at low currents and voltages.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12] Now, it is commonly considered that the decisive factors determining the strong current dependence of s c are electron distribution (perpendicular to the Si/SiO 2 interface) dependent on the high electric field near the interface 9 and Coulomb blockade effect. [10][11][12] On the other hand, it is shown by Mueller et al…”

Section: Introductionmentioning

confidence: 99%

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Gasparyan

Zadorozhnyi

2015

Journal of Applied Physics

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Articles you may be interested inThe basic reason for enhanced electron capture time, s c , of the oxide single trap dependence on drain current in the linear operation regime of p þ -p-p þ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of s c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n þ -p-n þ FETs, the experimentally observed slope of s c equals (À1). On the contrary, for the case of p þ -p-p þ Si FETs in the accumulation regime, the experimentally observed slope of s c equals (À2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface. V C 2015 AIP Publishing LLC.

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Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions

Cited by 16 publications

References 12 publications

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Physics of fluctuation processes in downscaled silicon MOSFETs

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

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