2013
DOI: 10.1364/oe.21.013675
|View full text |Cite
|
Sign up to set email alerts
|

III-V-on-silicon multi-frequency lasers

Abstract: Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
17
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
3
3
2

Relationship

0
8

Authors

Journals

citations
Cited by 32 publications
(17 citation statements)
references
References 10 publications
0
17
0
Order By: Relevance
“…Very good suppression of the side modes is obtained. A similar device was realized integrating the amplifier array with a demultiplexer consisting of four ring resonators with slightly increasing radii coupled to a common bus waveguide [27]. Similar threshold currents, output powers and linewidths were obtained as for the single ring tunable laser described above.…”
Section: Nm Tunable and Multi-wavelength Lasers Integrated On Simentioning
confidence: 76%
See 2 more Smart Citations
“…Very good suppression of the side modes is obtained. A similar device was realized integrating the amplifier array with a demultiplexer consisting of four ring resonators with slightly increasing radii coupled to a common bus waveguide [27]. Similar threshold currents, output powers and linewidths were obtained as for the single ring tunable laser described above.…”
Section: Nm Tunable and Multi-wavelength Lasers Integrated On Simentioning
confidence: 76%
“…It is important that they are well designed to have controllable reflection and low transmission loss, especially at the output side of the device. They could e.g., be implemented using a shallow etch step in a locally widened 220 nm high waveguide as described in [27]. Integrating the optical amplifier with a tunable ring resonator allows building a tunable laser as shown in Figure 8.…”
Section: Nm Tunable and Multi-wavelength Lasers Integrated On Simentioning
confidence: 99%
See 1 more Smart Citation
“…IMEC has since replaced the molecular bonding using SiO 2 by adhesive bonding using a BCB polymeric layer which is more tolerant to non-flatness of the bonding surfaces. Using this approach it has recently demonstrated a 4-channel WDM laser that produces more than 4 mW output power in the silicon waveguide [5]. Taper lengths in this approach are comparable to the approach of UCSB, in the order of 150 µm.…”
Section: Take Down Policymentioning
confidence: 99%
“…Heterogeneous integration by means of molecular or adhesive die-to-wafer bonding provides a scalable approach to integrate III-V opto-electronic components on the silicon photonics platform. Several types of laser sources have been realized on this platform, including single wavelength distributed feedback lasers [11][12], multi-wavelength lasers [13] and widely tunable lasers [7,14,15,16]. In this paper we present a novel type of widely tunable laser.…”
Section: Introductionmentioning
confidence: 99%