Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser

Zhang, Jing; Li, Yanlu; Dhoore, Sören; Morthier, Geert; Roelkens, Günther

doi:10.1364/oe.25.007092

Cited by 18 publications

(10 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A 4‐channel transceiver for point‐to‐point Fiber‐To‐The‐Home (FTTH) optical networks operating at 10 Gb/s was demonstrated by transfer printing pre‐fabricated O‐band III‐V photodetectors (PDs) on top of silicon photonic grating couplers . Figure a shows the pre‐fabricated PDs on the InP substrate after the release etch.…”

Section: Transfer Printingmentioning

confidence: 99%

“…(a) Pre‐defined PD array with contact metal on the III‐V source wafer, (b) Microscope image of the 4‐channel III‐V on Si FTTH transceiver with printed PDs after final metallization, (c) Overlaid 10 Gbit/s eye diagrams of the received upstream (O‐band) data signal and transmitted downstream (C‐band) data signal. (Reproduced from)…”

Section: Transfer Printingmentioning

confidence: 99%

“…This confirms the bond when transfer printing is of the same quality as for traditional die-to-wafer or wafer-to-wafer methods. [99,100] Figure 20a shows the pre-fabricated PDs on the InP substrate after the release etch. Note the high density of devices on the source wafer.…”

Section: Demonstrationsmentioning

confidence: 99%

“…In the last years we have been steadily moving towards transfer printed optical devices coupling to Si PICs, starting with III-V devices printed on a silicon substrate [96][97][98]101] and now moving on to simple devices coupling to SOI. [95,100] For the transfer-printingbased integration of light sources on Si PICs, there are still a few challenges ahead though. So far, the transfer printed coupons coupling to the Si PIC have been small (below 100 μm a side).…”

Section: Challengesmentioning

confidence: 99%

See 3 more Smart Citations

Novel Light Source Integration Approaches for Silicon Photonics

Wang

Abbasi

Dave

et al. 2017

Laser & Photonics Reviews

Self Cite

159

105

View full text Add to dashboard Cite

Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

show abstract

Section: Transfer Printingmentioning

confidence: 99%

Section: Transfer Printingmentioning

confidence: 99%

Section: Demonstrationsmentioning

confidence: 99%

Section: Challengesmentioning

confidence: 99%

See 2 more Smart Citations

Novel Light Source Integration Approaches for Silicon Photonics

Wang

Abbasi

Dave

et al. 2017

Laser & Photonics Reviews

Self Cite

159

105

View full text Add to dashboard Cite

show abstract

“…3(b)). In order to have a "V" shape waveguide cross section and thus a narrow taper tip in the laser waveguide definition by wet etching of the p-InP [22], the long side of the coupons was oriented along the [011] crystal axis. After etching into the n-InP layer, a second mesa which is 5 μm wider than the first one was defined, as shown in Fig.…”

Section: Iii-v Coupon Releasementioning

confidence: 99%

Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser

Zhang¹,

Haq²,

O’Callaghan³

et al. 2018

Opt. Express

Self Cite

103

View full text Add to dashboard Cite

An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20°C. Single mode operation around 1550 nm with > 40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures.

show abstract

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

show abstract

Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser

Cited by 18 publications

References 23 publications

Novel Light Source Integration Approaches for Silicon Photonics

Novel Light Source Integration Approaches for Silicon Photonics

Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Contact Info

Product

Resources

About