Abstract-The high index contrast silicon-on-insulator platform is the dominant CMOS 1 compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-oninsulator has some drawbacks for these emerging applications, e.g. silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

First-principles calculations have been performed to determine the effects of Ag doping to the structural, electronic, and optical properties of ZnO NWs. The calculated formation energies are very low for Ag dopants at substitutional-Zn sites (both under low and high Ag concentration), but rather high at substitutional-O and interstitial sites under O-rich conditions. The Ag Zn and 2Ag Zn defects all prefer the edge of the NW and the formation energy of 2Ag Zn in the favorable O-rich conditions is only 0.40 eV. The calculated acceptor levels of Ag Zn and 2Ag Zn ones are 0.60 and 0.44 eV respectively, indicating Ag may be a good candidate for producing p-type ZnO NW. From the optical properties calculations, strong absorptions have been found in the visible-light region for both the 2Ag Zn and Ag O -doped ZnO NWs. It provides evidence that, except for the usage as short-wavelength optoelectronic devices, Ag-doped ZnO NWs could also display potential application for photocatalysis due to the increase of the visible-photocatalytic activity.

VS4 as an electrode material in lithium-ion batteries holds intriguing features like high content of sulfur and one-dimensional structure, inspiring the exploration in this field. Herein, VS4 submicrospheres have been synthesized via a simple solvothermal reaction. However, they quickly degrade upon cycling as an anode material in lithium-ion batteries. So, three conductive polymers, polythiophene (PEDOT), polypyrrole (PPY), and polyaniline (PANI), are coated on the surface to improve the electron conductivity, suppress the diffusion of polysulfides, and modify the interface between electrode/electrolyte. PANI is the best in the polymers. It improves the Coulombic efficiency to 86% for the first cycle and keeps the specific capacity at 755 mAh g(-1) after 50 cycles, higher than the cases of naked VS4 (100 mAh g(-1)), VS4@PEDOT (318 mAh g(-1)), and VS4@PPY (448 mAh g(-1)). The good performances could be attributed to the improved charge-transfer kinetics and the strong interaction between PANI and VS4 supported by theoretical simulation. The discharge voltage ∼2.0 V makes them promising cathode materials.

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Zinc anode in aqueous batteries always suffers from severe electrochemical corrosion and internal dendrite growth. These issues could be alleviated by using hydrophobic polymers and ion-conductive inorganics as an artificial...

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The use of transition‐metal oxide (TMO) as an extended‐life electrochemical energy storage material remains challenging because TMO undergoes volume expansion during energy storage. In this work, a transition‐metal oxynitride layer (TMON, M: Fe, Co, Ni, and V) was synthesized on TMO nanowires to address the crucial issue of volume expansion. The unique oxynitride layer possesses numerous active sites, excellent conductivity, and outstanding stability. These characteristics enhance specific capacitance and alleviate volume expansion effectively. Specifically, the specific capacity of the TMON electrode is enhanced by approximately twofold relative to that of its corresponding oxide. Notably, the capacitance of the TMON remains above 94% even after 10 000 cycles. This result indicates that the cycling performance of the TMON electrode is superior to that of its corresponding oxide. First‐principles and quantitative kinetics analyses are performed to investigate the mechanism underlying the improved electrochemical performances of the TMON layers. Results demonstrate that the proposed TMON layer has attractive applications in the fields of energy storage, conversion, and beyond.