IEEE Electron Device Letters

Guarin, F; Saha, Samar K.; Past, Junior; Meyyappan, M.; Swart, Jacobus W.; Treasurer, S Iyer; Wang, A; Past, Senior; Berger, Paul R.; Bhat, Navakanta; Booth, R; Burghatz, J; Souza, M De; Farooq, Muhammad; Gutiérrez, Emilio Martín; Huang, Ran; Ikeda, Shoichiro; Iñiguez, Benjamı́n; Ishimaru, K.; Lilley, C; Misra, D.S.; Nathan, Arokia; Nehrer, W; Polavarapu, M; Saxena, Manoj; Sood, S; Velez, C; Zhao, B.; Members, Ex-Officio; Claeys, Cor; Ren, Tianhua; Iyer, Swaminathan P.; Radhakrishnan, M.; Todi, R; Dallessase, J; Smith, Lee; Fay, Patrick; Ng, Tobun D.; Vasi, J.; Çelik‐Butler, Zeynep; Guo, Xiaojun; Mahapatra, Samiran; Paoloni, Claudio; Del, J; Östling, Alamo; Eds, G Ghione; Skowrenski, James; Ús, Jes; Alamo, Jesús A. del; Egawa, Takashi; Jessen, Gregg H.; Jefferies, James; Kinsner, Witold; Grosz, Francis; Activities, Geographic; Fish, Robert; Liu, Association; Coughlin, Thomas; Jindal, Renuka; Welby, Stephen; Siegert, Thomas; Administration, Business; Cozin, Julie; Governance, Corporate; Hourican, Donna; Moesch, Jamie; Activities, Educational; Bailey, Jack; Brantley, Chris; Cherif, Ieee-Usa; Hawkins, Karen; Lisankie, Kevin; Tuohy, Peter; Cichocki, Jeffrey; Khinvasara, Neelam; Perry, Christopher

doi:10.1109/led.2018.2884068

“…As the copper is printed to the FTO, the measurement of line resistance therefore considers the parallel resistance of the printed ink and the underlying conductive FTO. Contact resistance and sheet resistance were calculated using the TLM method 24 . A Rofin 1064 nm Nd-YAG laser scribe was used for removal of the FTO to isolate the TLM area of the print.…”

Section: Methodsmentioning

confidence: 99%

Photonic sintering of copper for rapid processing of thick film conducting circuits on FTO coated glass

Abbas

¹

,

Jewell

²

,

Lau

³

et al. 2023

Sci Rep

7

0

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Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

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Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Guenifi

¹

,

Rahi

²

2021

Electrical and Electronic Devices, Circuits, and Materials

Get access via publisher Add to dashboard Cite

Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃

López

¹

,

Tornos

²

,

Peralta

³

et al. 2023

Adv Elect Materials

Get access via publisher Add to dashboard Cite

Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

show abstract

IEEE Electron Device Letters

Abstract: Postage and handling charge not included.) Member and nonmember subscription prices available on request.

Cited by 17 publications

References 0 publications

Photonic sintering of copper for rapid processing of thick film conducting circuits on FTO coated glass

Photonic sintering of copper for rapid processing of thick film conducting circuits on FTO coated glass

Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃

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IEEE Electron Device Letters

Abstract: Postage and handling charge not included.) Member and nonmember subscription prices available on request.

Cited by 17 publications

References 0 publications

Photonic sintering of copper for rapid processing of thick film conducting circuits on FTO coated glass

Photonic sintering of copper for rapid processing of thick film conducting circuits on FTO coated glass

Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Contact Info

Product

Resources

About

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃