I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Bartolomeo, Antonio Di

doi:10.3390/nano7070158

Cited by 63 publications

(44 citation statements)

References 20 publications

(24 reference statements)

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“…the formation of an inversion layer in Si 3 . Similar conclusions have been reported in 21,23 , where capacitance-voltage and current-voltage (I-V) measurements were carried out at different temperatures for validation. This fundamental observation of origins of photocurrent generation is a key to further improve the performance of G/Si photodiodes.…”

Section: Introductionsupporting

confidence: 84%

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

et al. 2018

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Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experimentally demonstrate highly sensitive G/Si photodiodes. With the proposed design, an external quantum efficiency (EQE) of > 80% is achieved for wavelengths ranging from 380 to 930 nm.A maximum EQE of 98% is observed at 850 nm, where the responsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes. This efficiency is attributed to the highly effective collection of charge carriers photogenerated in Si under the GIS parts of the diodes.The experimental data is supported by numerical simulations of the diodes. Based on these results, a definition for the 'true' active area in G/Si photodiodes is proposed, which may serve towards standardization of G/Si based optoelectronic devices.

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Section: Introductionsupporting

confidence: 84%

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

et al. 2018

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“…Graphene is commonly produced by exfoliation from graphite [28,29], epitaxial growth on SiC [30] or chemical vapor deposition (CVD) [31,32]. In particular, CVD produces uniform and large-scale graphene flakes of high-quality and is compatible with the silicon technology; therefore, it has been largely exploited to realize new electronic devices such as diodes [33][34][35][36], transistors [37][38][39], field emitters [40,41], chemical-biological sensors [42,43], optoelectronic systems [44], photodetectors [45][46][47][48][49][50] and solar cells [51].…”

Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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“…Having a deep insight into the phenomena taking place at those interfaces can give a better understand of the whole solar cell design. For this purpose, several characterization techniques have been studied with the aim of separating the contribution of each interface in the total solar cell behaviour [2][3][4][5][6][7][8]. The most used electrical characterization techniques are based on impedance measurement.…”

Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy for the Characterization of the All-Carbon Graphene-Based Solar Cell

et al. 2020

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In this work, front contacts for graphene-based solar cells are made by means of colloidal graphite instead of gold. The performance is characterized by exploiting impedance spectroscopy and is compared to the standard gold contact technology. Impedance data are analysed through equivalent circuit representation in terms of lumped parameters, suitable to describe the complex impedance in the frequency range considered in the experiments. Using this approach, capacitance-voltage of the considered graphene-silicon solar cell is found and the barrier height forming at the graphene-silicon interface is extracted.Energies 2020, 13, 1908 2 of 8 shapes, whose physical interpretation can be supported by searching for suitable equivalent circuits, with lumped elements (resistors, capacitors, inductors) associated to the phenomena taking place at each interface. The topology of such circuits can give strong indications about the role of active interfaces forming the device. As an example, it is known that a Nyquist plot with semicircular shape can be reproduced by a single (parallel) RC pair, with R given by the shunt resistance of the device and C (in the case of a solar cell) associated to the junction capacitance. The more the Nyquist plot differs from the semi-circular shape, the more several "active interfaces" are involved in the behaviour of the solar cell.In this work, impedance spectroscopy, interpreted in terms of equivalent circuits, is adopted to characterize a new contact technology for graphene-based solar cells. This new technology exploits a graphitic glue to form the top contact, instead of gold. The performance of solar cells made by means of both above mentioned contacts are compared and interpreted in terms of effectiveness. The extracted circuit configurations for the two types of solar cells enabled us to isolate, from the global impedance, the contributions given by the Schottky interface (graphene-silicon interface) and that of contact-graphene interface (gold-graphene in one case, or glue-graphene in the other case) respectively. The knowledge of these contributions allowed us to extract the barrier height and the work function of the graphene-silicon interface and the contact resistance of the contact-graphene interface.The paper is organized as follows: Section 2 contains an overview on the graphene-based solar cell processing; in Section 3 Nyquist plots are presented and measurement are described while in Section 4, the electrical properties of the solar cells are shown in terms of current-voltage (I-V) curves. Conclusions are drawn in Section 5. Solar Cells ProcessingFew layers of graphene (FLG) films were grown by chemical vapour deposition (CVD) of ethanol on Cu substrates at 1070 • C. The details relative to the CVD growth based on ethanol vapor precursor, to the graphene transfer and to the steps involved in the fabrication of the G/n-Si cells have been previously reported by the authors [13][14][15].The flow chart reported in Figure 1 resumes the cells fabrication process. The starting sub...

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I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

Cited by 63 publications

References 20 publications

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

Contact resistance and mobility in back-gate graphene transistors

Impedance Spectroscopy for the Characterization of the All-Carbon Graphene-Based Solar Cell

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