<i>In situ</i> synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

Richard, Marie-Ingrid; Highland, Matthew J.; Fister, Tim T.; Munkholm, A.; Mei, Jin; Streiffer, S. K.; Thompson, Carol; Fuoss, P. H.; Stephenson, G. B.

doi:10.1063/1.3293441

Cited by 35 publications

(24 citation statements)

References 25 publications

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“…The calculated theoretical critical thickness h c of the In 0.11 Ga 0.89 N on a rigid GaN and the experimental h c of the In 0.11 Ga 0.89 N on GaN template obtained in this work are summarized in Table 1. In order to figure out the reliability of our results, the reliable experimental h c obtained from Richard et al by reciprocal space mapping (RSM) using in situ synchrotron X-ray [24] and its corresponding calculated theoretical h c are also summarized in Table 1 [25,26]. Thus, it demonstrates that the obtained data and analyses in this study are reliable.…”

Section: Resultssupporting

confidence: 55%

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Fuchi

Tabuchi

et al. 2014

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 55%

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Fuchi

Tabuchi

et al. 2014

Journal of Crystal Growth

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“…The nature of these peaks was interpreted in terms of InGaN phase separation in the InGaN layers. Recently, Rechard et al [14] reported a phase separation of the InGaN layer with a thickness of more than 4 nm by in situ observation of the growth of InGaN epitaxial layers on GaN. The non-equilibrium origin of strain inhomogeneity in epitaxially strained thin films is the growth instability associated with strain relaxation in alloys [15].…”

Section: Methodsmentioning

confidence: 97%

Efficiency Improvement of Short-Period InGaN/GaN Multiple-Quantum Well Solar Cells With <formula formulatype="inline"><tex Notation="TeX">${\hbox{H}} _{2}$</tex></formula> in the GaN Cap Layer

Lai

Yang

Horng

2013

J. Display Technol.

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The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency ( ) compared with those of SCs without the ramped H in the GaN cap layer. The of the SC with the ramped H in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped H (0.46%). Furthermore, the of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%). Index Terms-GaN-based solar cells (SCs), short-period (SP) InGaN/GaN multiple-quantum well (MQW).

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“…The development of two-dimensional (2D) X-ray detectors has facilitated the in situ XRD studies of strain relaxation during heteroepitaxy, [39][40][41][42][43][44][45][46][47] NW growth, [48][49][50][51][52][53] and QD growth. [54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter.…”

Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

Abstract: Articles you may be interested inIn situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metalorganic vapor phase epitaxy

Cited by 35 publications

References 25 publications

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Efficiency Improvement of Short-Period InGaN/GaN Multiple-Quantum Well Solar Cells With <formula formulatype="inline"><tex Notation="TeX">${\hbox{H}} _{2}$</tex></formula> in the GaN Cap Layer

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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