Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Amano, Hiroshi; Takeda, Yoshikazu

doi:10.1016/j.jcrysgro.2014.08.023

Cited by 9 publications

(10 citation statements)

References 21 publications

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“…In situ GIXR measurements basically yield growth rates and layer thicknesses; it can also be applied for measuring the critical thickness for surface roughening and related relaxation of InGaN/GaN layers [40]; such measurements demonstrated that the strain relaxation of Ga 1-x In x N/GaN layers depends on the density of preexisting threading dislocations in the GaN layer beneath, yielding a critical thickness of GaInN varying inversely with dislocation density [41].…”

Section: Grazing Incidence X-ray Diffraction (Gixd) and Reflectionmentioning

confidence: 99%

In Situ Growth Analysis

Pohl

2020

Graduate Texts in Physics

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Sensors to analyse layer structures already during epitaxial growth provide valuable information for developing device structures and for ensuring the reproducibility of run-to-run conditions. Most analytical online tools are applicable to all major growth techniques. Today a variety of probes is routinely integrated into growth systems for monitoring in situ sample temperature, growth rate, layer thickness, composition, strain, and other parameters of the growth process. Sensors measure either the ambient in the vicinity of the growing sample or the sample surface. Ambient analysis comprises mass spectrometry and optical probes; they provide information about the mass transport, the kind and density of species, their temperature, and potential mutual reactions. Surface probes include diffraction techniques and various optical tools. Surface sensitivity for diffraction is achieved by applying grazing-incidence angles, and the diffracted electron and X-ray beams disclose the surface morphology and reconstructions. Optical probes are widely applied in gaseous growth ambient. The selectivity for the surface may strongly be enhanced by taking advantages of symmetry-related surface properties, and several optical probes can resolve the growth of single monolayers. The chapter describes prominent techniques for in situ analysis of epitaxy. After discussing ambient analysis using mass spectrometry and optical spectroscopy, surface probes are considered. Structural analysis by reflection high-energy electron diffraction and by X-ray diffraction is outlined, and optical probes by pyrometry and deflectometry yielding data on temperature and strain are presented. The text then focuses on reflectometry, ellipsometry, and reflectance-difference spectroscopy (reflectance-anisotropy spectroscopy); these techniques provide both chemical and structural information. Surface and Ambient ProbingSemiconductor devices consist of many epitaxial layers with different composition. The demand to control the perfection of growth in situ, i.e., already during epitaxy, led to the development of various analytical tools. Some of these sensors are today routinely integrated into commercial growth systems and allow for online monitoring

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Section: Grazing Incidence X-ray Diffraction (Gixd) and Reflectionmentioning

confidence: 99%

In Situ Growth Analysis

Pohl

2020

Graduate Texts in Physics

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“…The latter type of in situ X-ray reflectometry has been implemented in MOCVD for nitride semiconductors. [123][124][125] It has been shown that the accessible range of momentum transfer can be increased by exploiting the wavelength and angular dispersions at the same time. 126,127) Recently, Voegeli et al have devised a system using a bent-twisted crystal to monochromatize and focus the diverging X-rays from a laboratory point source.…”

Section: High-speed Measurementmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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“…GaInN films epitaxially grown on foreign substrates by MBE have been evaluated using ex situ X-ray diffraction and transmission electron microscopy (TEM) [12,[17][18][19][20][21][22] in addition to in situ reflection high-energy electron diffraction (RHEED) measurements [4,20]. A few papers are available on the MOCVD growth of GaInN studied using in situ XRD [23,24] and X-ray reflectivity [25].…”

Section: Introductionmentioning

confidence: 99%

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN

et al. 2019

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In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities.

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Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

Cited by 9 publications

References 21 publications

In Situ Growth Analysis

In Situ Growth Analysis

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN

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