In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN

Abstract

In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities.

Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices

“…20. 41) This result implies requirement of careful consideration on the pulling effect for accurate design and fabrication of heterostructures for quantum-size devices consisting of InGaN, GaN and InN.…”

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

“…In particular, the thermal properties of the AlN layer are desirable for the growth of high-quality GaN layer, i.e., the small difference in the TECs between the AlN layer and substrate are expected to reduce wafer bowing, dislocation density, and residual strain (the TECs of SCAM, sapphire, AlN, and GaN are ~6.2 × 10 −6 , ~8.3 × 10 −6 , 4.2 × 10 −6 , and 5.6 × 10 −6 /°C, respectively) [ 23 , 28 ]. Considering these advantages, improved crystallinity and reduced residual stress in an undoped-GaN (u-GaN) template layer grown on a c -sapphire substrate have been demonstrated by replacing a conventional in situ LT-GaN buffer layer with an ex-situ sp-AlN buffer layer [ 29 ]. Taking such improvements, an improved internal quantum efficiency (IQE) of green and ultraviolet-emitting QWs grown thereon has been demonstrated [ 27 , 29 , 30 , 31 ].…”

“…Considering these advantages, improved crystallinity and reduced residual stress in an undoped-GaN (u-GaN) template layer grown on a c -sapphire substrate have been demonstrated by replacing a conventional in situ LT-GaN buffer layer with an ex-situ sp-AlN buffer layer [ 29 ]. Taking such improvements, an improved internal quantum efficiency (IQE) of green and ultraviolet-emitting QWs grown thereon has been demonstrated [ 27 , 29 , 30 , 31 ].…”

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

“…This enables the design of various colored light-emitting diodes (LEDs) and solar cells with relatively high efficiency. Furthermore, with its good bandgaps and performances, InN has been widely employed in applications of photoelectric devices, semiconductor devices with good properties and high-performance infrared detectors [8][9][10][11][12][13][14]. However, the progress of InN semiconductors is still in its infancy.…”

“…However, the progress of InN semiconductors is still in its infancy. Actually, quantum efficiency inside a GaN/InGaN solar cell prepared on a sapphire substrate is as high as 60% [12]. Therefore, various methods have been used to prepare InN thin films with high quality to achieve wide practical applications [15][16][17][18][19][20][21][22][23].…”