Efficiency Improvement of Short-Period InGaN/GaN Multiple-Quantum Well Solar Cells With <formula formulatype="inline"><tex Notation="TeX">${\hbox{H}} _{2}$</tex></formula> in the GaN Cap Layer

Abstract

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency ( ) compared with those of SCs without the ramped H in the GaN cap layer. The of the SC with the ramped H in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped H (0.46%). Furthermore, the of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%). Index Terms-GaN-based solar cells (SCs), short-period (SP) InGaN/GaN multiple-quantum well (MQW).

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

“…The measured IQE of GaN/AlN digital alloys in sample B2 is ~75%, which is more than three times higher than the 23% IQE measured from sample A2. While the intended thickness of GaN/AlN digital alloys in both cases is the same, the Al–Ga intermixing on the c -plane (sample A2) leads to the formation of a wide Al(Ga)N QW with large inhomogeneity along with an increased probability to encounter nonradiative recombination centers and therefore a less efficient radiative recombination process ( 44 , 45 ).…”