In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4  ×  6 surface

Cheng, Chia-Ming; Chen, Wan-Sin; Cheng, Yi-Ting; Wan, Hsien-Wen; Lin, Kai‐Wei; Young, L.; Yang, Cheng-Yeh; Pi, Tun‐Wen; Kwo, J.; Hong, Minghui

doi:10.1088/1361-6463/aada5a

Cited by 3 publications

(3 citation statements)

References 32 publications

(42 reference statements)

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“…Note that three to five cycles of ALD-Y 2 O 3 as the initial deposition are employed to give a complete coverage, namely 1 monolayer, on GaAs surface, which may not be attained with two cycles of ALD-Y 2 O 3 [ 37 ]. The more cycles of ALD-Y 2 O 3 or ALD-Al 2 O 3 layer may cause less mixing uniformity.…”

Section: Resultsmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

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The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A.

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Section: Resultsmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

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“…22 To probe and fundamentally understand the interfacial chemical bonding, we have studied the initial growth mechanism of ALD-Y 2 O 3 on GaAs(001)−4 × 6 by synchrotron radiation photoelectron spectroscopy (SRPES). 23,24 We found the absence of Ga…”

Section: ■ Introductionmentioning

confidence: 96%

“…Compared with MBE, ALD has advantages of self-limiting growth with atomic accuracy and conformal coverage, and has been used in industrial manufacturing processes . To probe and fundamentally understand the interfacial chemical bonding, we have studied the initial growth mechanism of ALD-Y 2 O 3 on GaAs(001)–4 × 6 by synchrotron radiation photoelectron spectroscopy (SRPES). , We found the absence of Ga 2 O 3 , As 2 O 3 , and As 2 O 5 at the heterointerface and a strong interfacial Ga–O–Y bond which has stabilized the Y 2 O 3 /GaAs interface preventing interdiffusions, and moreover, they have enabled the attainment of excellent electrical characteristics, such as low D it values. Nevertheless, the existence of surface hydroxyls in as-deposited ALD-Y 2 O 3 films was observed via X-ray photoelectron spectroscopy (XPS) because of water absorption during the ALD process.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Chen

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low trap densities is the key to high-performance metal−oxide−semiconductor (MOS) devices. Atomic layer deposition (ALD) has been employed in precise thin oxide depositions with relatively low temperatures in the semiconductor device fabrication industry. Herein, we compare the electronic structures of nanometer-thick ALD-Y 2 O 3 on freshly grown GaAs(001)−4 × 6 without and with ultrahigh vacuum (UHV) annealing to 600 °C. In situ X-ray photoelectron spectroscopy (XPS) and in situ synchrotron radiation photoelectron spectroscopy (SRPES) with the best surface sensitivity were utilized to study the samples, whose pristine conditions were preserved under UHV between the growth and the characterization. In the Y 2 O 3 film, the surface Y−OH bonding and the pure As atoms resulting from the ALD process were completely removed with UHV annealing. Additionally, no O deficiency was detected in the resolution limit of XPS, indicating the intactness of the O−Y bonding. The UHV annealing has reduced traps in the Y 2 O 3 film, leading to smaller frequency dispersions in the measured capacitance−voltage (C−V) curves of the MOS capacitors (MOSCAPs). At the same time, the enriched Ga−O−Y bonds effectively passivated the GaAs surface and strongly stabilized the Y 2 O 3 /GaAs interface, resulting in lower interfacial trap density (D it ) values from (2−3) × 10 12 eV −1 cm −2 to (0.7−2) × 10 12 eV −1 cm −2 and maintaining the high-temperature stability. We have elucidated the effects of UHV annealing on the interfacial chemistry and the thin oxide film of the ALD-Y 2 O 3 /GaAs(001)−4 × 6 in an atomic scale, and have correlated the electronic characteristics of the heterostructure with the electrical properties of the MOSCAPs.

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Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

Cheng

Wan

Kwo

et al. 2021

Applied Surface Science

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In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y₂O₃ on a p-type GaAs(0 0 1)-4 × 6 surface

Cited by 3 publications

References 32 publications

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

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In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4 × 6 surface

Cited by 3 publications

References 32 publications

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

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In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y₂O₃ on a p-type GaAs(0 0 1)-4 × 6 surface

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation