<i>Ab initio</i>simulation of magnetic tunnel junctions

Waldron, Derek; Liu, Lei; Guo, Hong

doi:10.1088/0957-4484/18/42/424026

Cited by 67 publications

(54 citation statements)

References 68 publications

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“…We note that our results in the high-bias region are in contrast with those in Ref. 19, in which a rapid increase in the conductance is found also for the P configuration.…”

Section: Bias-dependent Current and Tmrcontrasting

confidence: 99%

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Resonant electronic states andI−Vcurves of Fe/MgO/Fe(100) tunnel junctions

2009

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The bias dependence of the tunnel magnetoresistance ͑TMR͒ of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the nonequilibrium Green's-function method with density-functional theory. At voltages smaller than 20 mV the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority-spin band. In the parallel configuration this contribution is quenched by a voltage comparable to the energy width of the interface state, whereas it persists at all voltages in the antiparallel configuration. At higher bias the transport is mainly determined by the relative positions of the ⌬ 1 band edges in the two Fe electrodes, which causes a decrease in the TMR.

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“…We note that our results in the high-bias region are in contrast with those in Ref. 19, in which a rapid increase in the conductance is found also for the P configuration.…”

Section: Bias-dependent Current and Tmrcontrasting

confidence: 99%

“…In experiments such a peak in the AP configuration only is indeed found at about 1 V. 6,7 We note that for the I-V curves calculated in Ref. 19 a corresponding peak in S͑V͒ would appear also in the P configuration.…”

Section: Bias-dependent Current and Tmrmentioning

confidence: 67%

Resonant electronic states andI−Vcurves of Fe/MgO/Fe(100) tunnel junctions

2009

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“…18), where EM was examined without considering the role of the voltage drop, in this work we now consider the role of the voltage drop in EM at low biases (where EM commonly occurs). 4,21,28 We show rather surprisingly, though first-principles quantum transport calculations, 18,31 that EM at the surfaces of nanoscale conductors is often determined by the local external field 28 rather than the wind force. 18,19,21,[23][24][25]27 When conductor dimensions approach the nanoscale, surface defects do not merely contribute to EM but also increasingly contribute to resistivity (via surface roughness scattering).…”

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confidence: 91%

Local fields in conductor surface electromigration: A first-principles study in the low-bias ballistic limit

et al. 2012

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Utilizing first-principles quantum transport calculations, we investigate the role of local fields in conductor surface electromigration. A nanometer thick Ag(100) thin film is adopted as our prototypical conductor, where we demonstrate the existence of intense local electric fields at atomic surface defects under an external bias. It is shown that such local fields can play an important role in driving surface electromigration and electrical breakdown. The intense fields originate from the relatively short (atomic-scale) screening lengths common to most elemental metals. This general short-range screening trend is established self-consistently within an intuitive picture of linear response electrostatics. The findings shed new light on the underlying physical origins of surface electromigration and point to the possibility of harnessing local fields to engineer electromigration at the nanoscale.

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“…The key components in the modelling are schottky barrier ( b ) and the applied voltage V A against current density. Ab initio simulation of magnetic tunnel junctions has been demonstrated by Derek Waldron et al [76]. The effect of schottky barrier profile on spin dependent tunnelling in a ferromagnet-insulator-semiconductor system is reported in N.L.Chung et al's work [77].…”

Section: Spin Polarizationmentioning

confidence: 96%