Hydrogenation and passivation of electron-beam-induced defects in N-type Si

Ohmura, Y.; Takahashi, Ken; Saitoh, Hitoshi; Kon, T.; Enosawa, A.

doi:10.1016/s0921-4526(99)00459-7

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…temperature during irradiation. To increase hydrogen concentration, the sample is first annealed in boiling water for 24 h [49], and then annealed in air from 300 • C to 450 • C in steps of 30 min on a hotplate [25]. To reduce laser scatter at the silicon interface, a coarse polish is applied to the larger faces of the sample, followed by a brief etch in a 1:10 HF/HNO 3 solution to remove surface strain.…”

Section: Discussionmentioning

confidence: 99%

Silicon-Integrated Telecommunications Photon-Spin Interface

et al. 2020

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Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface that possesses, simultaneously, long coherence lifetimes and efficient telecommunication-band optical access. In this work we report upon the T center, a silicon defect with long-lived spins and spin-selective bound exciton optical transitions at 1326 nm in the telecommunications O-band. In this first study of T centers in 28 Si, we present the temperature dependence of the zero-phonon line, report ensemble zero-phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magnetophotoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. Here we show that the T center in 28 Si offers electron and nuclear spin lifetimes beyond a millisecond and second, respectively, as well as optical lifetimes of 0.94(1) μs and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between longlived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.

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Section: Discussionmentioning

confidence: 99%

Silicon-Integrated Telecommunications Photon-Spin Interface

et al. 2020

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“…Hydrogenation and passivation of electron-beam-induced defects in n-Si has been recently studied by Ohmura et al [10] where hydrogenation has reduced the concentrations of the E 1 level (A centre: O-V complex), E 2 level (double-negative charge state of the di-vacancy) and E 3 level (single-negative charge state of di-vacancy). A new level at 0.33 eV below the conduction band edge has been shown to emerge after the hydrogenation, which has been related to the radiation-induced defect hydrogen complex.…”

Section: L45mentioning

confidence: 99%

In situ I Vstudy of swift ( 100 MeV) O⁶ion-irradiated Pd/n-Si devices

Srivastava

Sinha

Tripathi

et al. 2002

Semicond. Sci. Technol.

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An in situ I-V study of Pd/n-Si devices irradiated to swift (∼100 MeV) O 6+ ions for a fluence of 10 11 -10 13 cm −2 has been carried out. The devices have been irradiated at room and LN 2 temperatures. The irradiated devices have been hydrogenated in ex situ condition by molecular hydrogen. It has been observed that resistivity increases after the irradiation and there is a progressive increase with the increase of irradiation fluence. On hydrogenation, the devices irradiated at LN 2 temperature show that the irradiation-induced increased resistivity decreases back to the pre-irradiated condition, whereas the devices irradiated at room temperature do not show any change. The results have been understood in the realm of irradiation-induced defects.

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“…An irradiation dose of 320 kGy was applied to the crystal using 10 MeV electrons, with intermittent application of cooling dry ice to maintain a relatively low sample temperature during irradiation. To increase hydrogen concentration, the sample was first annealed in boiling water for 24 hours [38], and then annealed in air from 300 • C to 450 • C in steps of 30 minutes on a hotplate [3]. To reduce laser scatter at the silicon interface, a coarse polish…”

Section: Appendix A: Sample Preparationmentioning

confidence: 99%

Characterization of the T center in $^{28}$Si

Bergeron,

Chartrand,

Kurkjian

et al. 2020

Preprint

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Hydrogenation and passivation of electron-beam-induced defects in N-type Si

Cited by 6 publications

References 7 publications

Silicon-Integrated Telecommunications Photon-Spin Interface

Silicon-Integrated Telecommunications Photon-Spin Interface

In situ I Vstudy of swift ( 100 MeV) O⁶ion-irradiated Pd/n-Si devices

Characterization of the T center in $^{28}$Si

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Hydrogenation and passivation of electron-beam-induced defects in N-type Si

Cited by 6 publications

References 7 publications

Silicon-Integrated Telecommunications Photon-Spin Interface

Silicon-Integrated Telecommunications Photon-Spin Interface

In situ I Vstudy of swift ( 100 MeV) O6 ion-irradiated Pd/n-Si devices

Characterization of the T center in $^{28}$Si

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In situ I Vstudy of swift ( 100 MeV) O⁶ion-irradiated Pd/n-Si devices