Characterization of the T center in $^{28}$Si

Bergeron, L.; Chartrand, C.; Kurkjian, A. T. K.; Morse, K. J.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. -J.; Thewalt, M. L. W.; Simmons, S.

doi:10.48550/arxiv.2006.08794

Cited by 4 publications

(6 citation statements)

References 35 publications

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“…For intrinsic systems, every defect can deterministically have one or more corresponding nuclear spin registers with the proper choice of isotope during defect formation [138][139][140] . The hyperfine interaction for intrinsic nuclear spins can be large from the contact term (up to GHz 141 ).…”

Section: Nuclear Spin Registersmentioning

confidence: 99%

Quantum guidelines for solid-state spin defects

et al. 2021

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Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to longdistance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.

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Section: Nuclear Spin Registersmentioning

confidence: 99%

Quantum guidelines for solid-state spin defects

et al. 2021

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“…[68][69][70][71] The fast recombination time of G-centers with respect to similar emitters in Si (e.g. the T-center [32][33][34] ) would provide a more efficient read-out of the spin degree of freedom providing a spin-photon interface.…”

Section: Discussionmentioning

confidence: 99%

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Ristori,

Khoury,

Salvalaglio

et al. 2023

Advanced Optical Materials

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Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.

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“…It is less well studied than other defect centers in silicon [15], but is attracting more interest recently due to its ZPL transition of 935 nm, which lies directly in the telecommunications O-band. Furthermore, this defect center is believed to host transitions between two spin-1/2 states whose fine structure can be controlled by an external magnetic field, presenting the possibility of using the T-center for photon-spin coupling for QIS applications [25].…”

Section: Electronic Structure Of the Defect Centersmentioning

confidence: 99%

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Ivanov¹,

Simoni²,

Lee³

et al. 2022

Preprint

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The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 Tcenter are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the Dzz component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.

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Characterization of the T center in $^{28}$Si

Cited by 4 publications

References 35 publications

Quantum guidelines for solid-state spin defects

Quantum guidelines for solid-state spin defects

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

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