In situ I Vstudy of swift ( 100 MeV) O⁶ ion-irradiated Pd/n-Si devices

Abstract

An in situ I-V study of Pd/n-Si devices irradiated to swift (∼100 MeV) O 6+ ions for a fluence of 10 11 -10 13 cm −2 has been carried out. The devices have been irradiated at room and LN 2 temperatures. The irradiated devices have been hydrogenated in ex situ condition by molecular hydrogen. It has been observed that resistivity increases after the irradiation and there is a progressive increase with the increase of irradiation fluence. On hydrogenation, the devices irradiated at LN 2 temperature show that the irradiation-induced increased resistivity decreases back to the pre-irradiated condition, whereas the devices irradiated at room temperature do not show any change. The results have been understood in the realm of irradiation-induced defects.

Electronic and magneto-transport study across swift heavy ion irradiated exchange coupled Fe/NiO bilayer on Si substrate

“…1 (b) that the value of current has decreased on the irradiation which seems to be due to the irradiation induced defects etc. The observation of such decrease in conductivity after irradiation has also been earlier observed by our group [28,29]. It is also interesting and significant to observe that with the decrease in temperature (from RT to 9K), the current has decreased five times as compared to RT.…”

Electronic flow across swift ( 100 MeV) heavy ion irradiated Fe/Si interfaces

“…The significant increase of the current across the irradiated devices (by nearly two orders of magnitude) in such a ferromagnetic metal/semiconductor interface seems to be a unique observation. There have been many I-V studies of swift heavy ion irradiated non-magnetic metal/semiconductor interfaces by us and others [16][17][18]. In all such studies, it has been found that the current decreases heavily after irradiation.…”

AFM and electronic transport studies of swift heavy ion irradiated Mn/p-Si bilayer structure

“…It is intriguing and significant to observe such a large increase of interfacial conductivity across the interface after swift heavy ion irradiation. Because in earlier studies by us [11,12] after swift heavy ion irradiation of non-magnetic metal/ semiconductor structures, the conductivity has been observed to decrease after the irradiation. The decrease could be understood from the fact that irradiation induced disorders/ defects gives rise to electronic traps to reduce the conductivity across the interface.…”