2017
DOI: 10.1007/s11664-017-5977-8
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Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

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Cited by 7 publications
(1 citation statement)
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“…Similar morphology but a different scattering mechanism was achieved in hydrogenated microcrystalline Si (μc-Si:H) thin film by Acosta et al 61,62) Thermal annealing did not cause an obvious variation in crystalline size and volume fraction but k dropped from 3.2 to 1.5 W mK −1 (P-type), which was dominantly attributed to carrier-phonon scattering caused by increased carrier concentration after annealing. However, energy barriers in grain interfaces induced the reduction of global carrier concentration and restrained σ to a certain degree; zT of 0.06 was achieved at RT.…”
Section: Low-dimensional Strategies Of Reducing-k-orientedsupporting
confidence: 55%
“…Similar morphology but a different scattering mechanism was achieved in hydrogenated microcrystalline Si (μc-Si:H) thin film by Acosta et al 61,62) Thermal annealing did not cause an obvious variation in crystalline size and volume fraction but k dropped from 3.2 to 1.5 W mK −1 (P-type), which was dominantly attributed to carrier-phonon scattering caused by increased carrier concentration after annealing. However, energy barriers in grain interfaces induced the reduction of global carrier concentration and restrained σ to a certain degree; zT of 0.06 was achieved at RT.…”
Section: Low-dimensional Strategies Of Reducing-k-orientedsupporting
confidence: 55%