Abstract:In this paper we report on the design, fabrication and characterization of terahertz (THz) bi-material sensors with metamaterial absorbers. MEMS fabrication-friendly SiO x and Al are used to maximize the bimetallic effect and metamaterial absorption at 3.8 THz, the frequency of a quantum cascade laser illumination source. Sensors with different configurations were fabricated and the measured absorption is near 100% and responsivity is around 1.2 deg/μW, which agree well with finite element simulations. The results indicate the potential of using these detectors to fabricate focal plane arrays for real time THz imaging.

Metamaterial absorbers with nearly 100% absorption in the terahertz (THz) spectral band have been designed and fabricated using a periodic array of aluminum (Al) squares and an Al ground plane separated by a thin silicon dioxide (SiO2) dielectric film. The entire structure is less than 1.6 mm thick making it suitable for the fabrication of microbolometers or bi-material sensors for THz imaging. Films with different dielectric layer thicknesses exhibited resonant absorption at 4.1, 4.2, and 4.5 THz with strengths of 98%, 95%, and 88%, respectively. The measured absorption spectra are in good agreement with simulations using finite element modeling.

Abstract. To increase the sensitivity of uncooled thermal sensors in the terahertz (THz) spectral range (1 to 10 THz), we investigated thin metamaterial layers exhibiting resonant absorption in this region. These metamaterial films are comprised of periodic arrays of aluminum (Al) squares and an Al ground plane separated by a thin silicon-rich silicon oxide (SiO x ) dielectric film. These standard MEMS materials are also suitable for fabrication of bi-material and microbolometer thermal sensors. Using SiO x instead of SiO 2 reduced the residual stress of the metamaterial film. Finite element simulations were performed to establish the design criteria for very thin films with high absorption and spectral tunability. Single-band structures with varying SiO x thicknesses, square size, and periodicity were fabricated and found to absorb nearly 100% at the designed frequencies between three and eight THz. Multiband absorbing structures were fabricated with two or three distinct peaks or a single-broad absorption band. Experimental results indicate that is possible to design very efficient thin THz absorbing films to match specific applications.

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Abstract:In this article we report on metamaterial-based narrowband thermal terahertz (THz) emitters with a bandwidth of about 1 THz. Single band emitters designed to radiate in the 4 to 8 THz range were found to emit as high as 36 W/m 2 when operated at 400 °C. Emission into two wellseparated THz bands was also demonstrated by using metamaterial structures featuring more complex unit cells. Imaging of heated emitters using a microbolometer camera fitted with THz optics clearly showed the expected higher emissivity from the metamaterial structure compared to low-emissivity of the surrounding aluminum.

We report 3ω thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 • C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.14 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.65 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

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Abstract. We report on the characterization of metal-organic hybrid metamaterials for MEMS-based terahertz (THz) thermal sensors and on the characterization of refractive index of SU-8 in the THz band. This type of metamaterial, coupled with the applicability of SU-8 as a structural material, offers possibilities for quick, simple microfabrication of THz imagers. SU-8, a negative photoresist, is a low-cost material that can quickly be spun onto a substrate at a wide range of thicknesses, and then photolithographically patterned into a variety of structures. It is also transparent to THz radiation and thus a suitable choice for a dielectric spacer in metamaterials. We investigated metamaterials consisting of a 0.18 μm Al ground plane and 0.18-μm layer of patterned Al separated by a dielectric spacer of ∼0.5 μm of SU-8. Absorption close to 70% at around 6.1 THz was observed. A model was developed to simulate absorption spectra of several metamaterials, agreeing well with experiments. Matching simulation to measurements was used to determine the refractive index of SU-8 at THz frequencies, extending the known values from 0.1 to 1.6 THz to as far as 10 THz. Finally, Kirchoff's law for these metamaterials was verified and their use as THz emitters demonstrated with about 0.8 mW∕cm 2 output.