Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions

Jugdersuren, Battogtokh; Kearney, Brian; Liu, Xiao; Stroud, Rhonda M.; Culbertson, James C.; DeSario, Paul A.; Nemeth, William; Wang, Qi

doi:10.1007/s11664-019-07262-y

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…High doping levels in silicon were studied by Jugdersuren et al [ 61 ], who deposited Si film by LPCVD, setting the temperature of the substrate to 250

C. Boron was ion implanted, and the specimen were then annealed up to 700

C. All samples displayed a columnar microstructure, possibly with an amorphous incubation layer. Depending on sample post-deposition annealing, the in-plane grain size ranged from 5 to 12 nm.…”

Section: Increasing Pf In Polycrystalline Siliconmentioning

confidence: 99%

Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Narducci

Giulio

2022

Materials

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Silicon is the most widely used functional material, as it is geo-abundant and atoxic. Unfortunately, its efficiency as a thermoelectric material is very poor. In this paper, we present and discuss advances of research on silicon and related materials for thermoelectric applications, mostly focusing on the comparison between the two strategies deployed to increase its performance, namely either reducing its thermal conductivity or, in polycrystalline materials, increasing its power factor. Special attention will be paid to recent results concerning silicon thin films. The enhancement of Si performances has motivated efforts to develop integrated heat microharvesters operating around room temperature, which will be reviewed also in view of their applications to power wireless sensors for the Internet of Things.

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“…High doping levels in silicon were studied by Jugdersuren et al [ 61 ], who deposited Si film by LPCVD, setting the temperature of the substrate to 250

C. Boron was ion implanted, and the specimen were then annealed up to 700

C. All samples displayed a columnar microstructure, possibly with an amorphous incubation layer. Depending on sample post-deposition annealing, the in-plane grain size ranged from 5 to 12 nm.…”

Section: Increasing Pf In Polycrystalline Siliconmentioning

confidence: 99%

Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Narducci

Giulio

2022

Materials

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“…The material has been successfully 8 9 10 11 employed in solar cells, transistors, sensors, field emission, water 12 13 14 15 16 splitting, super-capacitors, waveguides, coatings, photo-detection etc There are several methods/approaches reported in literature for . synthesis of device quality nc-Si thin films such as pulsed laser 17 18 deposition (PLD), atomic layer deposition (ALD), hot wire chemical 19 vapour deposition (HW-CVD) or simply hot wire method, plasma 20 21 enhanced chemical vapour deposition (PE-CVD), sputtering etc. The inherent indirect band gap of c-Si (~ 1.1 eV) limits its ability to convert light below its band edge into photocurrent.…”

Section: Introductionmentioning

confidence: 99%

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Jadkar¹,

Pawbake²,

Jadhavar³

et al. 2019

ES Mater.Manuf.

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In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and -8 4 -6 recovery time (1.71 s) along with responsivity ( 9.8x10 A/W), detectivity ( 5.5x10 Jones) and quantum efficiency ( 27.37x10 %). The obtained results demonstrate a significant step towards nc-Si:H based photo-detector for broadband photo-detection applications.

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Supporting plasma processes for fabrication of n-doped nano-crystalline silicon thin film on low-cost glass substrates

Bui

Huynh

et al. 2021

Vacuum

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Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions

Cited by 4 publications

References 26 publications

Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Supporting plasma processes for fabrication of n-doped nano-crystalline silicon thin film on low-cost glass substrates

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