Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Narducci, Dario; Giulio, Federico

doi:10.3390/ma15031214

Cited by 23 publications

(12 citation statements)

References 98 publications

(106 reference statements)

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“…The conductivity of polycrystalline silicon is significantly influenced by the potential barrier, since the effective mobility of carriers is figured out by the potential barrier, as shown in Equations (1) and (2) [ 11 , 12 , 13 , 14 , 15 , 16 ].

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Section: Discussionmentioning

confidence: 99%

Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

2022

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A specimen observed with a transmission electron microscope (TEM) was processed by focused ion beam (FIB) from a surface-micromachined polycrystalline silicon MEMS structure. Electron irradiation and in situ observation were performed on a selected grain boundary in the specimen. The grain boundary was observed and located by using lattice-oriented selective TEM photography. An evolution progress of amorphization of small silicon grain within the grain boundary and recrystallization of amorphous silicon were observed. A silicon grain turned into several smaller bar grains within the grain boundary. The mechanism of grain-boundary evolution inducing a change of conductivity of polycrystalline silicon has been revealed. The conductivity of polycrystalline silicon influenced by electron irradiation could be attributed to the change of grain boundary.

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…”

Section: Discussionmentioning

confidence: 99%

Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

2022

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“…Figure 1a presents the method used for the measurement of S = ΔV/ΔT. Semiconductor materials are extensively studied [15][16][17][18] , as a same semiconductor can be used as n-type or p-type TE material depending on doping, and they allow substantial band engineering. However, interest of spin effects on material TE properties is growing, and investigations on magnetic material potential for TE applications has considerably raised.…”

Section: Magnetic Moment Impact On Spin-dependent Seebeck Coefficient...mentioning

confidence: 99%

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Portavoce

Assaf

Bertoglio

et al. 2023

Sci Rep

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Magnetic materials may be engineered to produce thermoelectric materials using spin-related effects. However, clear understanding of localized magnetic moments (µI), free carriers, and Seebeck coefficient (S) interrelations is mandatory for efficient material design. In this work, we investigate µI influence on the spin-dependent S of model ferromagnetic thin films, allowing µI thermal fluctuations, ordering, and density variation influence to be independently investigated. µI influence on free carrier polarization is found to be of highest importance on S: efficient coupling of free carrier spin and localized magnetic moment promotes the increase of S, while spin-dependent relaxation time difference between the two spin-dependent conduction channels leads to S decrease. Our observations support new routes for thermoelectric material design based on spin-related effects in ferromagnetic materials.

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“…1,2 As is known, single-crystalline bulk Si is a poorly performing thermoelectric material. 3 Despite its high power factor (4.5 mW m −1 K −2 at the optimal doping of 10 19 cm −3 ), its high thermal conductivity κ ≈ 140 W m −1 K −1 at room temperature dramatically reduces its thermoelectric figure of merit to about 0.01 at 300 K. 4 One possible way to reduce κ without affecting the Si Seebeck coefficient α and electrical conductivity σ is through the formation of dimensionally constrained nanostructures (NSs). 1 Si NWs with diameters smaller than the phonon mean-free path reported κ < 5 W m −1 K −11,2 due to phonon scattering at NW walls.…”

Section: ■ Introductionmentioning

confidence: 99%

Self-Sustained Quasi-1D Silicon Nanostructures for Thermoelectric Applications

Giulio,

Puccio,

Magagna

et al. 2023

ACS Appl. Electron. Mater.

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Silicon (Si) nanowires have garnered significant interest for their potential applications in Si-based thermoelectrics, primarily due to their low thermal conductivity. While there are several methods to obtain Si nanowires, their density has been a limiting factor, resulting in a low power density that can be achieved by thermoelectric generators. To address this limitation, metal-assisted chemical etching (MACE) has been developed, enabling the creation of high-density nanopillar “forests”. This technique overcomes the previous density constraints. However, Si nanopillars protrude from a bulk Si wafer, which adds its thermal and electric resistivity to those of nanopillars, ultimately reducing the overall power density that can be attained. In this paper, we demonstrate how precise control of pre- and post-MACE processing allows for the creation of fully self-sustained quasi-1D Si nanostructures. We additionally demonstrate that pre-MACE Si processing does not control nanopillar bundling; rather, it primarily determines their shape. This outcome is attributed to the formation of gas nanobubbles during the initial steps of MACE.

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Recent Advances on Thermoelectric Silicon for Low-Temperature Applications

Cited by 23 publications

References 98 publications

Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Self-Sustained Quasi-1D Silicon Nanostructures for Thermoelectric Applications

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