Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

We report on the experimental demonstration of aluminum scandium nitride (AlScN)-on-cubic silicon carbide (3C-SiC) Lamb wave resonators (LWRs) realized via microelectromechanical systems (MEMS) technology, operating at high temperature (T) up to T = 800 °C, while retaining robust electromechanical resonances at ∼27 MHz and good quality factor of Q ≈ 900 even at 800 °C. Measured resonances exhibit clear consistency and stability during heating and cooling processes, validating the AlScN-on-SiC LWRs can operate at high T up to 800 °C without noticeable degradation in moderate vacuum (∼20 mTorr). Even after undergoing four complete thermal cycles (heating from 23 to 800 °C and then cooling down to 23 °C), the devices exhibit robust resonance behavior, suggesting excellent stability and suitability for high-temperature applications. Q starts to decline as the temperature exceeds 400 °C, which can be attributed to energy dissipation mechanisms stemming from thermoelastic damping and intrinsic material loss originating from phonon–phonon interactions.

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Microstructure of electronic-grade polycrystalline silicon core-matrix interface

Lu,

Yang,

Zhang

et al. 2024

J. Adv. Dielect.

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This paper focuses on the problems encountered in the production process of electronic-grade polycrystalline silicon. It points out that the characterization of electronic-grade polycrystalline silicon is mainly concentrated at the macroscopic scale, with relatively less research at the mesoscopic and microscopic scales. Therefore, we utilize the method of physical polishing to obtain polysilicon characterization samples and then the paper utilizes metallographic microscopy, scanning electron microscopy-electron backscatter diffraction technology, and aberration-corrected transmission electron microscopy technology to observe and characterize the interface region between silicon core and matrix in the deposition process of electronic-grade polycrystalline silicon, providing a full-scale characterization of the interface morphology, grain structure, and orientation distribution from macro to micro. Finally, the paper illustrates the current uncertainties regarding polycrystalline silicon.

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Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

Cited by 3 publications

References 18 publications

Effect of grain boundary orientation on the recombination in polycrystalline materials: a theoretical and simulation study

Effect of grain boundary orientation on the recombination in polycrystalline materials: a theoretical and simulation study

AlScN-on-SiC microelectromechanical Lamb wave resonators operating at high temperature up to 800 °C

Microstructure of electronic-grade polycrystalline silicon core-matrix interface

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