Hydrogen in silicon: A discussion of diffusion and passivation mechanisms

Sopori, Bhushan; Deng, Xiao; Benner, J.P.; Rohatgi, A.; Sana, P.; Estreicher, Stefan K.; Park, Y.K.; Roberson, Mark A.

doi:10.1016/0927-0248(95)00098-4

Cited by 158 publications

(106 citation statements)

References 8 publications

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“…3,39 In our experiments, we have directly observed the presence of vacancy-H complexes in our samples by IR spectroscopy. Figure 6 shows a vibrational line at 2223 cm −1 that is due to the vacancy-H 4 complex in Si ͑Refs.…”

Section: Vacancy-hydrogen Complexesmentioning

confidence: 99%

“…It has been proposed that the Si vacancy might play a role during hydrogenation processes. 3,39 Vacancy-H complexes have been studied previously by IR spectroscopy, 40,41 which has made it possible for us to detect the presence of vacancies that have been introduced into Si samples during hydrogenation treatments.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8] A popular, low-cost method to introduce H is by the postdeposition annealing of a H-rich SiN x layer that is deposited for use as an antireflection coating. The effect that the postdeposition annealing of a SiN x layer has on solar-cell performance has been widely studied.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN x surface layer was found to introduce H into the Si bulk with a concentration of ϳ10 15 cm −3 under the best conditions investigated here.

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Section: Vacancy-hydrogen Complexesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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“…[20][21][22][23][24][25][26][27] The physical mechanisms of bulk passivation by hydrogenation are not yet completely understood. For instance, the hydrogen diffusion mechanism 28 and the role of an aluminum back surface field (Al-BSF) in this process [29][30][31][32][33][34] as well as the interaction between hydrogen and oxygen complexes in silicon 35,36 are still the subject of discussion. The benefits of bulk passivation by silicon nitride however are so evident that its implementation in the production process of mc-Si solar cells has become a priority for the PV industry.…”

Section: Introductionmentioning

confidence: 99%

Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD

Soppe

Rieffe

Weeber

2005

Prog. Photovolt: Res. Appl.

135

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Bulk and surface passivation by silicon nitride has become an indispensable element in industrial production of multicrystalline silicon (mc-Si) solar cells. Microwave PECVD is a very effective method for high-throughput deposition of silicon nitride layers with the required properties for bulk and surface passivation. In this paper an analysis is presented of the relation between deposition parameters of microwave PECVD and material properties of silicon nitride. By tuning the process conditions (substrate temperature, gas flows, working pressure) we have been able to fabricate silicon nitride layers which fulfill almost ideally the four major requirements for mcSi solar cells: (1) good anti-reflection coating (refractive index tunable between 2Á0 and 2Á3); (2) good surface passivation on p-type FZ wafers (S eff < 30 cm/s); (3) good bulk passivation (improvement of IQE at 1000 nm by 30% after short thermal anneal); (4) long-term stability (no observable degradation after several years of exposure to sunlight). By implementing this silicon nitride deposition in an inline production process of mc-Si solar cells we have been able to produce cells with an efficiency of 16Á5%.Finally, we established that the continuous deposition process could be maintained for at least 20 h without interruption for maintenance. On this timescale we did not observe any significant changes in layer properties or cell properties. This shows the robustness of microwave PECVD for industrial production.

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“…It is considered unlikely that this represents an increase in the flux of hydrogen incident on the sample. The most plausible explanations are that this difference is due to either etching of the silicon or the creation of signicant quantities of defects near the silicon surface through the plasma exposure [14,15]. The defects can effectively trap hydrogen, and thus reduce the amount of hydrogen available to deactivate boron or diffuse further into the wafer, while hydrogen located at the defects cannot be detected using the eCV method.…”

Section: Resultsmentioning

confidence: 99%

A novel source of atomic hydrogen for passivation of defects in silicon

Hamer

Bourret‐Sicotte

Martins

et al. 2017

Physica Rapid Research Ltrs

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Palladium membranes have been used for decades for the separation of hydrogen from other gasses. In this letter the use of thin palladium leaves to act as sources of atomic hydrogen for silicon samples is explored. It has been assumed in the past that although hydrogen diffuses through palladium in atomic form, the atoms recombine to form molecular hydrogen at the surface. In this letter it is shown that hydrogen supplied to one surface of a palladium leaf can result in atomic hydrogen being released from the opposite surface at low pressure. This is demonstrated through the use of a palladium leaf in a direct plasma system which allows for atomic hydrogen to be supplied to a sample while avoiding exposure to UV radiation from the plasma and high energy charged particles. This method is shown to provide significant atomic hydrogen to silicon samples and improve passivation of silicon surfaces. Method of Shielded Hydrogen Passivation: Schematic of direct plasma chamber with a shield inserted between the plasma and the silicon sample.

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Hydrogen in silicon: A discussion of diffusion and passivation mechanisms

Cited by 158 publications

References 8 publications

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD

A novel source of atomic hydrogen for passivation of defects in silicon

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