Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Schuette, D. R.; Westhoff, R.; Loomis, A.H.; Young, Douglas; Ciampi, Joseph; Aull, Brian F.; Reich, R.

doi:10.1117/12.849356

Cited by 12 publications

(8 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 The APD wafer process includes the following sequence of steps: (1) APD substrate removal, (2) processing of the back side of the APD to form an ion implanted p+ contact layer, sparse back-side contact metallization, and antireflection coating, (3) transfer of the APD to a fused silica substrate, and (4) front side processing leading to patterning of indium bumps on the APD arrays. Steps 1 through 3 are carried out with the APD wafer fusion bonded on the front side to a temporary silicon handle wafer, which is then removed by grinding and etch prior to step 4.…”

Section: Apd Fabrication and Integration With Cmos Readoutmentioning

confidence: 99%

Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

Aull

2015

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

Geiger-mode avalanche photodiodes (GMAPDs) are capable of detecting single photons. They can be operated to directly trigger all-digital circuits, so that detection events are digitally counted or time stamped in each pixel. An imager based on an array of GMAPDs therefore has zero readout noise, enabling quantum-limited sensitivity for photon-starved imaging applications. In this review, we discuss devices developed for 3D imaging, wavefront sensing, and passive imaging.

show abstract

Section: Apd Fabrication and Integration With Cmos Readoutmentioning

confidence: 99%

Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

Aull

2015

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

show abstract

“…This processing step creates a thin mesa of detector material as illustrated in Figure 2. Alternatively, a UV transparent substrate may be attached to the detector wafer and the initial silicon wafer removed, as described in [6], to form a bump-bondable array. …”

Section: Uvapd Fabrication Processmentioning

confidence: 99%

“…This process fabricates APD arrays that may be vertically integrated with CMOS support electronics via techniques including flip-chip bump bonding ( [6]) or 3D circuit integration ( [7]), facilitating high-density detector integration for compact devices. The UVAPD front illumination steps follow our standard process flow, outlined in [6]. It begins with a series of implants that form the active region of the device, followed by interconnecting metals and a capping oxide.…”

Section: Uvapd Fabrication Processmentioning

confidence: 99%

“…It begins with a series of implants that form the active region of the device, followed by interconnecting metals and a capping oxide. The back illumination process for UVAPD devices initially follows our standard process (also described in [6]), by oxide bonding the front-illuminated APD device wafers to silicon handle wafers via the process outlined and then thinning the device wafer through a sequence of grinding, chemical/mechanical polishing, and wet chemical etching. The target thickness for the UVAPD devices is between 5 and 10 μm.…”

Section: Uvapd Fabrication Processmentioning

confidence: 99%

See 1 more Smart Citation

MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

et al. 2011

Self Cite

View full text Add to dashboard Cite

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.

show abstract

“…Another application is chronic biomedical monitoring [9], where a wearable or implantable miniaturized single-photon sensor could be left in situ to continuously monitor a person's health status, providing more accurate information about the progression of diseases such as cancer and other inflammatory or chronic ailments. However, current SPAD technology is generally implemented on bulk silicon and can't meet the requirements of implantable biomedical applications where backside-illumination and new substrate post processing are core technologies, while inherent CMOS compatibility is a requirement [10,11]. In our previous work, we demonstrated the world's first flexible SPAD fabricated in an ultrathin-body silicon-on-insulator (SOI) process followed by transfer post-processing to flexible substrate [12], and we achieved a flexible SPAD with dual-side illumination for the first time [13].…”

Section: Introductionmentioning

confidence: 99%

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration

Sun¹,

Ishihara²,

Charbon³

2016

Opt. Express

View full text Add to dashboard Cite

Abstract:We proposed the world's first flexible ultrathin-body singlephoton avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside-(FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.

show abstract

Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Cited by 12 publications

References 9 publications

Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration

Contact Info

Product

Resources

About