MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Schuette, D. R.; Westhoff, R.; Ciampi, Joseph; Perlin, Gayatri E.; Young, Douglas; Aull, Brian F.; Reich, R.; Shaver, David C.

doi:10.1117/12.887736

Cited by 3 publications

(4 citation statements)

References 8 publications

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“…In PureB Si photodiodes such instability has not been observed. This was in contrast to devices with dielectric surface layers, where traps formed at/near the interface with the Si due to exposure to radiation or electrical stress, would in fact degrade optical responsivity and increase leakage currents [16].…”

Section: Introductionmentioning

confidence: 92%

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

2023

JST: ETSD

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Boron deposition on both n-Si and n-GaN in the temperature range 250 - 500 °C, has been shown to form diodes with low saturation currents, i.e., electron injection from the n-substrate into the B-layer was efficiently suppressed. Moreover, down to 3-nm-thick B-layers on Si were shown to form a material barrier to Al, opening the possibility of fabricating Au-free gates for gallium-nitride high-electron-mobility transistors (GaN HEMTs). Several different chemical- and physical-vapor deposition (CVD/PVD) methods for depositing B have been studied for fabricating p+n-like Si diodes, called PureB diodes, all with comparable results. In this paper, the deposition of B-layers from diborane in a CVD batch furnace system is evaluated, particularly for use as a barrier material to enable Al-contacting of GaN diodes. These Al-B diodes could provide an option for fabricating low-leakage diodes that are compatible with complementary metal-oxide-semiconductor (CMOS) processing at industrially attractive high throughput. The bulk B has high resistivity, which, combined with the fact that non-uniformities in the nm range, are typical due to gas depletion along the furnace tube and gives uncontrollable, often high diode series resistance. A simulation study shows that Al-B could, nevertheless, be used as a gate stack in HEMTs for low-frequency power applications.

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Section: Introductionmentioning

confidence: 92%

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

2023

JST: ETSD

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“…The growth of a highly doped passivation layer by MBE has also been demonstrated on BSI SPADs [ 117 ]. The deposition of a thin anti-reflection coating (ARC), optimized for near-UV light, provides a protection for the MBE layer and further increases the PDE of the detector above 70% at 405

.…”

Section: Perspective Of 3d Pdc For Radiation Instrumentationmentioning

confidence: 99%

“…Although photoelectrons created above the barrier can still be trapped and lost, it nevertheless has the advantage that any undesired electrons thermally excited at the surface will not make it to the avalanche region, thus blocking that source of noise. The growth of a highly doped passivation layer by MBE has also been demonstrated on BSI SPADs [117]. The deposition of a thin anti-reflection coating (ARC), optimized for near-UV light, provides a protection for the MBE layer and further increases the PDE of the detector above 70 % at 405 nm.…”

Section: Backside Illumination (Nir-vismentioning

confidence: 99%

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

Pratte

Nolet

Parent

et al. 2021

Sensors

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Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

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“…Juan Mata Pavia is with the Universitäts Spital Zürich and EPFL. Martin Wolf is with the Universitäts Spital Zürich, 3D integrated circuit (IC) technology on the contrary has the potential for high sensitivity thanks to the virtually perfect photon collection capability [4], [5], [6], [7]. However, to date, no 3D IC has been demonstrated integrating both detection and processing.…”

Section: Introductionmentioning

confidence: 99%

A dual backside-illuminated 800-cell multi-channel digital SiPM with 100 TDCs in 130nm 3D IC technology

Charbon

Scandini

Pavia

et al. 2014

2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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We report on the world's first backside-illuminated silicon photomultiplier (SiPM) implemented in 3D integrated circuit technology. The SiPM was fabricated in a two-tier 130nm CMOS process; the top tier houses 1600 single-photon avalanche diodes (SPADs), organized in a dual 4x200 linear array; the bottom tier houses 2x100 time-to-digital converters (TDCs). Every 8 SPADs there is one shared TDC whose digital output is routed to a 1.04Gps readout interface that enables a total count rate of 80Mcps. Preliminary results show a photon detection probability of 11% at a wavelength of 725nm and a dark count rate of 1kHz at room temperature and nominal excess bias, which reduces to 80Hz if cooled to -40 o C at 2V excess bias; the breakdown voltage, Vbd, was measured at 12.3V. The sensor is intended for time-of-flight vision, wide-field near-infrared imaging, and lifetime fluorescence spectroscopy used in medical, particle detection, and material analysis applications.

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MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Cited by 3 publications

References 8 publications

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

Batch Furnace Chemical Vapor Deposition of Pure Boron Layers on Si and GaN Substrates for Low-Leakage-Current Diode Fabrication

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

A dual backside-illuminated 800-cell multi-channel digital SiPM with 100 TDCs in 130nm 3D IC technology

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