Hot-electron energy-loss rate via PO-phonon scattering in CdZnSe/ZnSe quantum wire

Vartanian, Arshak L.; Asatryan, Anna L.; Kirakosyan, A.A.

doi:10.1016/j.physb.2006.06.160

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…Coupling of cadmium selenide and zinc selenide would produce a material with various band gap energies * E-mail: Ijazwatoozi@gmail.com depending upon the composition, which may be suitable for increased absorption of solar spectrum and enhanced resistance towards photo corrosion [5]. Cadmium zinc-selenide [(CdZn)Se] is one of the important ternary compound semiconducting materials that due to its excellent optical properties and fast response times has a wide range of potential applications in the photo luminescent, electroluminescent, photoconductive and photovoltaic device applications [1,6]. A number of thin film deposition methods, such as molecular beam epitaxy, electron beam pumping, chemical bath deposition (CBD) etc.…”

Section: Introductionmentioning

confidence: 99%

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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Cd 1−x Zn x Se (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd 1−x Zn x Se thin films annealing effect at 400°C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters E o and E d were investigated using a single effective oscillator model. The calculated value of the average excitation energy E o obeys the empirical relation (E o = E g /2) obtained from the single oscillator model.

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Section: Introductionmentioning

confidence: 99%

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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show abstract

“…Cadmium zinc-selenide [(CdZn)Se] is one of the important ternary materials for use in electroluminescent, photoluminescent, photoconductive and photovoltaic device applications because of its interesting size- 3 Author to whom any correspondence should be addressed. dependent properties as well as a high stability and wide optical band gap which covers the maximum electromagnetic spectrum [1,3,10,11].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the structural and optical properties of indium-diffused Cd_0.7Zn_0.3Se thin films

Chavhan¹,

Lee²,

Lee³

2008

J. Phys. D: Appl. Phys.

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Cadmium zinc-selenide (Cd0.7Zn0.3Se) thin films were deposited on the ITO substrate using chemical bath deposition techniques by optimizing the deposition parameters. The as-deposited films were annealed in air at 200, 300 and 400 °C for 1 h. The composition, surface morphology and structural properties of the as-deposited and annealed Cd0.7Zn0.3Se thin films were studied using x-ray photoelectron spectroscopy, scanning electron microscopy and x-ray diffraction techniques. The as-deposited films exhibited the hexagonal phase of CdSe and ZnSe. The films annealed at 200 °C showed the dominant cubic phase of CdSe and the hexagonal phase of ZnSe. However, the cubic structure of Cd0.7Zn0.3Se was transformed into a hexagonal structure after annealing at 300 and 400 °C. The lattice parameter a for the cubic structure was 6.0865 Å, whereas for the hexagonal structure a varied from 4.3035 to 4.2938 Å and c varied from 7.0916 to 6.9868 Å. The optical absorption spectra were recorded within the range 350–800 nm. The optical band gaps were 2.08 eV, 2.03 eV, 1.91 eV and 1.72 eV for the as-deposited films and those annealed at 200 °C, 300 °C and 400 °C, respectively. The drastic decrease in the optical band gap at 300 and 400 °C was due to the indium diffusion into the Cd0.7Zn0.3Se matrix.

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“…It is an n-type semiconductor with intriguing size-dependent characteristics, great stability, and a large band gap that covers the whole electromagnetic spectrum (Gu et al 2005, Pan et al 2013, Wang et al 2016, Yang et al 2015. Cd 1−x Zn x Se is a notable ternary compound material with a wide-ranging potential utilisation in various optoelectronic device applications due to its remarkable optical features (Hankare et al 2006, Vartanian, Asatryan, andKirakosyan 2007). Moreover, film preparation can be performed by diverse fabrication methods (Trager-Cowan et al 1996, Schreder et al 2000, Kale et al 2007.…”

Section: Introductionmentioning

confidence: 99%

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

Islam,

Rashid,

Akhtaruzzaman

et al. 2023

Mater. Res. Express

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This research investigates the potential of Cd1-xZnxSe thin film for photovoltaic applications. The electrical behavior of CIGS-based solar cells is examined with the novel Cd1-xZnxSe as buffer layer material by Solar Cell Capacitance Simulator (SCAPS). The tunability of Cd1-xZnxSe facilities to reduce the defects between the absorber and buffer layer by determining the ideal conduction band offset. It is revealed that cross-over occurs between the p-type absorber and the metal back contact if the metal work function is below 4.6 eV. In this research, a thin PEDOT: PSS back surface (BSF) layer was integrated which enhances the device efficiency from 22.5 percent to 28.32% while retaining the metal work function at 5.1 eV. The trade-off between the use of metal having a higher work function and the inclusion of a heavily doped BSF layer is one of the important findings of this research. These findings pave the way for Cd1-xZnxSe to be commercially used as a buffer layer material for CIGS solar cells.

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Hot-electron energy-loss rate via PO-phonon scattering in CdZnSe/ZnSe quantum wire

Cited by 7 publications

References 23 publications

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Effect of annealing on the structural and optical properties of indium-diffused Cd_0.7Zn_0.3Se thin films

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

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Hot-electron energy-loss rate via PO-phonon scattering in CdZnSe/ZnSe quantum wire

Cited by 7 publications

References 23 publications

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Effect of annealing on the structural and optical properties of indium-diffused Cd0.7Zn0.3Se thin films

Exploration of Cd1−xZnxSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

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Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Effect of annealing on the structural and optical properties of indium-diffused Cd_0.7Zn_0.3Se thin films

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer