Hot carrier luminescence for backside 0.15 μm CMOS device analysis

Ng, Wee Loon; Gao, G.S.; Abraham, A.; Lundquist, Ted

doi:10.1109/irws.2002.1194246

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…They have very good timeresolving capabilities, but cannot provide any location information. However, data acquisition time for single-point detectors is measured in minutes versus hours for 2D detectors like Mepsicron [17].…”

Section: Introductionmentioning

confidence: 99%

Using Optical Emission Analysis for Estimating Contribution to Power Analysis

Skorobogatov

2009

2009 Workshop on Fault Diagnosis and Tolerance in Cryptography (FDTC)

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Abstract-This paper shows that optical emissions from an operating chip have a good correlation with power traces and can therefore be used to estimate the contribution of different areas within the chip. I present a low-cost approach using inexpensive CCD cameras. The technique was used to recover data stored in SRAM, EEPROM and Flash of a 0.9 µm microcontroller. The result of a backside approach in analysing a 0.13 µm chip is also presented. Practical limits for this analysis in terms of sample preparation, operating conditions and chip technology are also discussed. Optical emission analysis can be used for partial reverse engineering of the chip structure by spotting the active areas. This can assist in carrying out optical fault injection attacks later, thereby saving the time otherwise required for exhaustive search.

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Section: Introductionmentioning

confidence: 99%