We report octave-spanning super-continuum generation in a silica photonic crystal fiber (PCF) pumped by a compact, efficient, mode-locked all-normal dispersion Yb:fiber laser. The laser achieved 45% optical-to-optical efficiency by using an optimized resonator design, producing chirped 750 fs pulses with a repetition rate of 386 MHz and an average power of 605 mW. The chirped pulses were compressed to 110 fs with a loss of only 4% by using multiple reflections on a pair of Gires-Tournois interferometer mirrors, yielding an average power of up to 580 mW. The corresponding peak power was 13.7 kW and produced a super-continuum spectrum spanning from 696-1392 nm.
Optoelectronic imaging of integrated-circuits has revolutionized device design debug, failure analysis and electrical fault isolation; however modern probing techniques like laser-assisted device alteration (LADA) have failed to keep pace with the semiconductor industry's aggressive device scaling, meaning that previously satisfactory techniques no longer exhibit a sufficient ability to localize electrical faults, instead casting suspicion upon dozens of potential root-cause transistors. Here, we introduce a new high-resolution probing technique, two-photon laser-assisted device alteration (2pLADA), which exploits two-photon absorption (TPA) to provide precise three-dimensional localization of the photo-carriers injected by the TPA process, enabling us to implicate individual transistors separated by 100 nm. Furthermore, we illustrate the technique's capability to reveal speed-limiting transistor switching evolution with an unprecedented timing resolution approaching <10 ps. Together, the exceptional spatial and temporal resolutions demonstrated here now make it possible to extend optical fault localization to sub-14 nm technology nodes.
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