Homogeneous 2D MoTe<sub>2</sub> CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Chen, Jing; Zhu, Jingjing; Wang, Qiyuan; Wan, Jing; Liu, Ran

doi:10.1002/smll.202001428

Cited by 38 publications

(29 citation statements)

References 46 publications

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“…These advances include enhanced contact performance [32,88] and greater control of active channel parameters. [113] Applications in electronics include 2D-material-based transistors [13,16,19,104,[114][115][116][117][118] and memory devices. [119][120][121][122]…”

Section: Electronic Applicationsmentioning

confidence: 99%

“…Modifying the electrical properties of active 2D materials is a direct way to improve or tune the performance of electronic and optoelectronic devices that utilize these materials. Optically modified 2D material devices have been demonstrated with laserdoping-, [13,16,[114][115][116][117][118] reduction-, [19,104] oxidation-, [64] and ablation- [125] induced bandgap engineering. These laser-initiated changes can reduce threshold voltage, increase drive current, [126] modify the conductance, and widen the operation spectral range of optoelectronic devices.…”

Section: Tuning Electrical Performancementioning

confidence: 99%

“…These laser-initiated changes can reduce threshold voltage, increase drive current, [126] modify the conductance, and widen the operation spectral range of optoelectronic devices. As an example, optical doping has been used to create p-n junctions [114,116,118] and transistors [16,[116][117][118] with significant property changes, such as carrier density change [114] of 7 × 10 12 cm −2 in graphene and respective DC and AC voltage gains [115] up to 28 in MoTe 2 . The optical modification method provides versatile ways to modify the properties of 2D material electrical devices for improved operation.…”

Section: Tuning Electrical Performancementioning

confidence: 99%

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Optical Modification of 2D Materials: Methods and Applications

2022

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on the same chip, which is promising for integrated electronics or photonics applications, [7] such as lasers, [8][9][10] optical modulators, [11] and photodetectors. [12] Indeed, 2D materials are an excellent candidate for postsilicone electronics due to their unique properties, versatile scaling of channel length, reduced device dimensionalities, and the possibility of creating circuits nearly at the atomic level. [13] Currently, some of the biggest challenges for 2D material synthesis include the lack of large-scale manufacturing and the necessity of harsh or arduous microand nanofabrication methods. Typical fabrication methods are based on chemical vapor deposition (CVD) and mechanical exfoliation from bulk crystals. The former involves a process that results in layers with relatively high concentrations of atomic impurities, [14] and the latter is limited in producing large area flakes. [14] Further fabrication steps for the incorporation of 2D materials into integrated devices typically require processes like electron-beam lithography and reactive ion etching, [15] both of which can be harmful to flakes that are atomically thin.All-optical processing of 2D materials has been demonstrated to overcome limitations of the conventional synthesis methods. It is time-and cost-effective, and it is also a promising fabrication alternative over CVD and mechanical exfoliation. Optical modification processes offer selectivity, locality, directionality, tunability, less harmful conditions, and on-demand functionalities, such as optical doping, [16][17][18][19] oxidation, [20][21][22][23] optical thinning, [24][25][26][27][28] and phase change. [29][30][31][32] Additionally, almost all of the optical modification and fabrication methods can be used for laser-direct writing (LDW) of patterns and structures at the microscale. [33][34][35][36] The high precision of LDW is particularly advantageous in the evolving world of nanofabrication. Lasers allow local modification of 2D material electronic bandgap, [37] thickness, [25] strain, [33,[38][39][40] and chemical composition, [19,41,42] even beyond the diffraction limit. [33] The created structures and patterns can often be directly used for applications in sensors, [22] energyprocessing devices, [43] and holography [44] (Figure 1). All the major demonstrations using LDW on 2D materials are listed in Table 1. Here, we review the optically assisted synthesis and fabrication methods of 2D materials, and their state-of-theart applications, providing detailed descriptions and features of optically engineered devices using 2D materials. We have straightforwardly introduced light-matter interactions and 2D-material-light interactions, and we also present our perspectives on this emerging field.2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and costineffective. Optical modification is demonstrated as an effective an...

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Section: Electronic Applicationsmentioning

confidence: 99%

Section: Tuning Electrical Performancementioning

confidence: 99%

Section: Tuning Electrical Performancementioning

confidence: 99%

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Optical Modification of 2D Materials: Methods and Applications

2022

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“…In spite of the grand promise of 2DLMs for FETs, such as, intrinsic immunity to short-channel effects and outstanding gate tunability, building complementary logic circuitry has proven to be challenging regarding the difficulty of realizing high-performance n-type and p-type FETs by exploiting an individual kind of 2D semiconductor. Therefore, exploitation of multiple materials with various intrinsic charge-carrier polarities [202][203][204] and specific post-synthesis treatments such as solution processing, [205] laser irradiation, [206] and doping [207] have been developed to address this issue. For example, in 2017, Lee et al fabricated a high-performance inverter with a voltage gain of ≈40 through integrating the n-type InGaZnO FET and p-type MoTe 2 FET.…”

Section: D Layered Materials Alloys Based Logic Invertersmentioning

confidence: 99%

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Yao

Yang

2021

Advanced Science

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2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

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“…Possible solutions include a number of unconventional atomic doping and surface modification techniques that are being explored, such as molecular doping, − surface charge transfer or electron doping, − electrical activation, , focused laser irradiation, − and deep ultraviolet (DUV) irradiation. , These methods mainly involve surface dopants or H 2 O in the atmosphere, MgO film evaporated by electron-beam evaporation, O 2 /H 2 O via electrothermal annealing induced by an electric field, or doping in the channel due to generation of vacancy defects and excess O atoms induced by laser irradiation . Another route is electrostatic doping achieved through gating, where the presumably dominant transport carrier type in the 2D channel is often regulated and dominated by a Schottky barrier (SB). , However, the state-of-the-art method of tailoring the SB height has been limited to employing contact metals with different work functions.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer MoTe₂ Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

et al. 2021

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Atomically thin semiconductors such as transition metal dichalcogenides have recently enabled diverse devices in the emerging two-dimensional (2D) electronics. While scalable 2D electronics demand monolithic integrated circuits consisting of complementary p-type and n-type transistors, conventional p-type and n-type doping in desired regions, monolithically in the same semiconducting atomic layers, remains elusive or impractical. Here, we report on an agile, high-precision scanning laser annealing approach to realizing 2D monolithic complementary logic circuits on atomically thin MoTe2, by reliably designating p-type and n-type transport polarity in the constituent transistors via localized laser annealing and modification of their Schottky contacts. Pristine p-type field-effect transistors (FETs) transform into n-type ones upon controlled laser annealing on their source/drain gold electrodes, exhibiting a mobility of 96.5 cm2 V–1 s–1 (the highest known to date) and an On/Off ratio of 106. Elucidation and validation of such an on-demand configuration of polarity in MoTe2 FETs further enable the construction and demonstration of essential logic circuits, including both inverter and NOR gates. This dopant-free, spatially precise scanning laser annealing approach to configuring monolithic complementary logic integrated circuits may enable programmable functions in 2D semiconductors, exhibiting potential for additively manufactured, scalable 2D electronics.

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Homogeneous 2D MoTe₂ CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Cited by 38 publications

References 46 publications

Optical Modification of 2D Materials: Methods and Applications

Optical Modification of 2D Materials: Methods and Applications

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Atomic Layer MoTe₂ Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

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Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Cited by 38 publications

References 46 publications

Optical Modification of 2D Materials: Methods and Applications

Optical Modification of 2D Materials: Methods and Applications

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

Contact Info

Product

Resources

About

Homogeneous 2D MoTe₂ CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Atomic Layer MoTe₂ Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing