2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Abstract

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Bandgap Engineering of Ternary ε‐InSe1−xSx and ε‐InSe1−yTey Single Crystals for High‐Performance Electronics and Optoelectronics

“…[27] In addition, the multilayer InSe 1-x S x and InSe 1-y Te y alloys based FETs showed slightly degraded mobilities of less than 127 cm 2 V −1 s −1 , which should be ascribed to the fact that the incorporation of heterogeneous S or Te atoms intensifies the impurity scattering (Figure 6c). [15] It was anticipated that by engineering the device configuration such as support substrate and metal contacts, as-prepared InSe and its alloys would have the chance to improve their carrier mobilities. The resistances of typical devices were also measured.…”

“…[14] However, alloying these 2D layered materials can extend the intrinsic limitation of this 2D family by changing their constituent stoichiometry, and this approach has been developed as a flexible approach to achieving bandgap engineering. [15] This strategy has in fact led to the creation of a large selection of TMDs alloys, such as Mo 1−x W x Te 2 , [16] MoS 2x Se 2(1−x) , [17,18] WSe 2(1−x) Te 2x , [19] HfS 2(1−x) Te 2x , [20] and HfS 2x Se 2(1−x) , [21] to name a few, and has witnessed the success in various electronic and optoelectronic applications.…”

Pulsed‐Laser‐Deposition Fabricated ZnIn2S4 Photodetectors with Excellent ON/OFF Switching Characteristics toward High‐Temperature‐Resistant Photodetection Applications

“…On the whole, the ZIS photodetectors exhibit relatively high on/off ratio and fast response rate, while the responsivity and detectivity are on the moderate level. However, it is to be emphasized that the ZIS photodetectors can be compatible with various improvement strategies such as alloy engineering, [57] construction of heterostructures [58] and dielectric engineering, [59] which suggests that the device performance can be further improved in the future.…”

High-throughput characterization of transition metal dichalcogenide alloys: Thermodynamic stability and electronic band alignment

“…TMDs have received a considerable amount of attention over the last decade, e.g., due to the excellent optical properties of the semiconducting group 6 TMD MoS 2 [1], the prospects of vertical integration into heterostructures [2], the emergent properties of moiré structures [3,4], and the outlook of using TMDs as catalysts for the hydrogen evolution reaction [5]. Many TMD monolayers exhibit moderate band gaps of around 1 to 3 eV, which is suitable for photochemical applications or for use as channel materials in nanoelectronics [6][7][8]. Due to the emergence of high-κ dielectrics as gate material in transistors such as ZrO 2 and HfO 2 , 2D TMDs based on the same transition metals may also play a role in future high-κ transistor designs [9].…”