Hole transport through minibands of a symmetrically strained Ge<i>x</i>Si1−<i>x</i>/Si superlattice

Park, J. S.; Karunasiri, R. P. G.; Wang, K. L.; Rhee, S. S.; Chern, C. H.

doi:10.1063/1.101314

Cited by 33 publications

(1 citation statement)

References 14 publications

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“…There have been several attempts to improve the performance of Si-based devices, such as hetero-junction bipolar transistors and modulation-doped field effect transistors, by using SiGe alloys (People 1986; Iyer et al 1989; Park et al 1989). Since one of the most advantageous features in Si devices is the availability of good quality oxide, prepared by thermal oxidation and its interface with substrate, control of oxidation process is a key technology for future SiGe-based devices.…”

Section: Fabrication Of Novel Nanometre Sized Multilayer Structures Tmentioning

confidence: 99%

Chemical bond manipulation for nanostructure integration on wafer scale

Prabhakaran

Ogino

1999

Bull Mater Sci

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In this paper, we have briefly summarized our activity in the area of chemical bond manipulation for the integration of nanostructures on a full wafer scale. Chemical bond manipulation involves a judicious combination of surface phenomena: reactions or diffusion, and growth process such as molecular beam epitaxy (MBE). Here, we present our results on oxidation, metallization and nitridation and their role in the formation of nanostructures. We find that oxygen changes the bonding partner from Ge to Si and this phenomenon can be controlled by controlling the annealing temperature. We have employed this phenomenon for the fabrication of novel, multiperiod Si/SiO2/Ge layered structure which exhibits interesting fight emitting properties. Further, by making use of selective diffusion of cobalt atoms through Ge layers it is possible to incorporate metallic features into Ge quantum dots. Moreover, it is possible to fabricate Si nanopillars through high temperature reaction of nitric oxide. NO molecules dissociate on the surface and nitrogen atoms thus produced form nitride islands. These islands act as protective masks for the etching of Si by the oxygen atoms, through the desorption of SiO species. Occurrence of these two simultaneous processes result in the formation of nanometre-sized Si pillars capped by silicon nitride. All these results emphasize the fact that we can extend information obtained through traditional surface science experiments for the fabrication of novel structures on a full wafer scale.

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Section: Fabrication Of Novel Nanometre Sized Multilayer Structures Tmentioning

confidence: 99%