Chemical bond manipulation for nanostructure integration on wafer scale

Abstract

In this paper, we have briefly summarized our activity in the area of chemical bond manipulation for the integration of nanostructures on a full wafer scale. Chemical bond manipulation involves a judicious combination of surface phenomena: reactions or diffusion, and growth process such as molecular beam epitaxy (MBE). Here, we present our results on oxidation, metallization and nitridation and their role in the formation of nanostructures. We find that oxygen changes the bonding partner from Ge to Si and this phenomenon can be controlled by controlling the annealing temperature. We have employed this phenomenon for the fabrication of novel, multiperiod Si/SiO2/Ge layered structure which exhibits interesting fight emitting properties. Further, by making use of selective diffusion of cobalt atoms through Ge layers it is possible to incorporate metallic features into Ge quantum dots. Moreover, it is possible to fabricate Si nanopillars through high temperature reaction of nitric oxide. NO molecules dissociate on the surface and nitrogen atoms thus produced form nitride islands. These islands act as protective masks for the etching of Si by the oxygen atoms, through the desorption of SiO species. Occurrence of these two simultaneous processes result in the formation of nanometre-sized Si pillars capped by silicon nitride. All these results emphasize the fact that we can extend information obtained through traditional surface science experiments for the fabrication of novel structures on a full wafer scale.

Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale

“…Although a significant number of reports have been aimed at the electrical characterization of only O 2 RIE plasma activated and chemically activated Si/Si bonded interfaces [17][18][19], no reports have been published yet on the electrical characterization of sequentially plasma activated Si/Si bonded interfaces. This characterization of the bonded interface provides a scientific basis for integration of nanostructures on whole wafers [20] that is required for mass production of nanoscale devices.…”

Collisions of Silylium Cations with Hydroxyl-Terminated and Other Self-Assembled Monolayer Surfaces: Reactions, Dissociation, and Surface Characterization

“…Practically, intermolecular dehydration of the related monoalkyl and dialkyl hydroxysilanes is important as a route to silicone polymers. 33 Formation of Si-O bonds has also been utilized for the synthesis of nanostructures on wafers, 34 and this chemistry has been used to graft functional groups to silica supports for chromatographic applications. 35 The trimethylsilyl cation is of particular interest as an analogue of the methyl cation and for its possible isolation in the condensed phase.…”