HiPIMS deposition of silicon nitride for solar cell application

Tiron, Vasile; Velicu, Ioana–Laura; Pană, Iulian; Cristea, Daniel; Rusu, Bogdan-George; Dincă, P.; Poroşnicu, C.; Grigore, E.; Munteanu, Daniel; Tascu, Sorin

doi:10.1016/j.surfcoat.2018.03.025

Cited by 19 publications

(9 citation statements)

References 31 publications

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“…F Avino https:/ /orcid.org/0000-0002-6206-0960 The large fraction of ionized sputtered atoms in plasmas obtained with High Power Impulse Magnetron Sputtering (HiPIMS) is making this technique very attractive for a constantly increasing number of fields [1][2][3][4][5][6]. The scientific community is devoting a significant effort to investigate and unveil the physical mechanisms of HiPIMS plasmas [7][8][9][10][11], as well as to explore the advantages with respect to well known sputtering techniques such as Direct Current Magnetron Sputtering (DCMS) [12,13].…”

Section: Orcid Idsmentioning

confidence: 99%

Corrigendum: Evidence of ion energy distribution shift in HiPIMS plasmas with positive pulse (2019 Plasma Sources Sci. Technol. 28 01LT03)

Avino

Sublet

Taborelli

2019

Plasma Sources Sci. Technol.

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Section: Orcid Idsmentioning

confidence: 99%

Corrigendum: Evidence of ion energy distribution shift in HiPIMS plasmas with positive pulse (2019 Plasma Sources Sci. Technol. 28 01LT03)

Avino

Sublet

Taborelli

2019

Plasma Sources Sci. Technol.

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“…There are three main classes of detection methods for the detection of hydrogen in crystalline silicon samples. The first is vacuum-based techniques to detect the total hydrogen concentration (including secondary ion mass spectroscopy [SIMS], 62,118 atom probe tomography [APT], 119,120 and glow discharge optical emission spectroscopy [GDOES] 121 ). The second is the detection of hydrogen complexes such as hydrogen-metal, 75,[122][123][124][125][126] hydrogendefect, [127][128][129] or hydrogen dimers, [130][131][132] typically using infrared or Raman spectroscopy, [130][131][132][133] deep level transient spectroscopy (DLTS), 98,122,123,127,134,135 or electron paramagnetic resonance (EPR).…”

Section: Methods For Detecting Hydrogen In Silicon Solar Cellsmentioning

confidence: 99%

Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon

Hallam

Hamer

Wenham

et al. 2020

Progress in Photovoltaics

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The understanding and development of advanced hydrogenation processes for silicon solar cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells, yet the properties of hydrogen in silicon are still poorly understood. This is largely due to the complex behaviour of hydrogen in silicon and its ability to exist in many different forms in the lattice. For commercial solar cells, hydrogen is introduced into the device through the deposition of hydrogen-containing dielectric layers and the subsequent metallisation firing process. This process can readily passivate structural defects such as grain boundaries but is ineffective at passivating numerous defects in silicon solar cells such as the boron-oxygen complex, responsible for light-induced degradation in p-type Czochralski silicon. This difficulty is due to the need to first form the boron-oxygen defect and also due to atomic hydrogen naturally occupying low-mobility and low-reactivity charge states. However, these challenges can be overcome using advanced hydrogenation processes incorporating excess carrier generation from illumination or current injection that increase the concentration of the highly mobile and reactive neutral charge state. As a result, after fast firing, additional low-temperature advanced hydrogenation processes incorporating illumination can be implemented to enable the passivation of difficult defects like the boron-oxygen complex. With the implementation of such processes for industrial silicon solar cells, efficiency improvements of 1.1% absolute can be obtained.

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“…The signal at 840 cm -1 is due do Si-N bonds [13], while at 1000 -1100 cm -1 the signals occur due to Si-N stretching [7,13] and presence of Si-O-N [11].…”

Section: Characterisation Of Surface Chemical Bondsmentioning

confidence: 98%

Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon

Avotiņa

Pajuste

Romanova³

et al. 2019

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Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical bonds in the layers were identified by means of Fourier transform infrared spectrometry, attenuated total reflection (FTIR-ATR) method. (From the SEM and AFM images it was estimated that both single and multi-layer coatings are deposited homogenously. Si-N breathing and stretching modes are observed in FTIR spectra and the surface morphology is highly dependent on PolySi, therefore suggesting the decrease of the roughness of the bottom electrode for use in the nanocapacitors.

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HiPIMS deposition of silicon nitride for solar cell application

Cited by 19 publications

References 31 publications

Corrigendum: Evidence of ion energy distribution shift in HiPIMS plasmas with positive pulse (2019 Plasma Sources Sci. Technol. 28 01LT03)

Corrigendum: Evidence of ion energy distribution shift in HiPIMS plasmas with positive pulse (2019 Plasma Sources Sci. Technol. 28 01LT03)

Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon

Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon

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