Highly reliable high-voltage transistors by use of the SIPOS process

Matsushita, Tomonori; Aoki, T.; Ohtsu, T.; Yamoto, Hisayoshi; Hayashi, Hisao; Okayama, M.; Kawana, Y.

doi:10.1109/t-ed.1976.18494

Cited by 111 publications

(12 citation statements)

References 7 publications

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“…In electronic devices based on complementary metal–oxide–semiconductor (CMOS) technology, the performances are dictated by the quality of the gate oxides considering the continuous reduction of their dimensions to reach larger integrations. SiO x was first used as a replacement for silicon dioxide as an insulating layer in bipolar transistors . For this reason, SiO x phases have been the subjects of several studies aimed at establishing their composition and structure. − The electronic properties of SiO x systems also drive their optical properties.…”

Section: Introductionmentioning

confidence: 99%

Local Site Distribution of Oxygen in Silicon-Rich Oxide Thin Films: A Tool to Investigate Phase Separation

Ristić¹,

Ivanda

Speranza

et al. 2012

J. Phys. Chem. C

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Thin films of nonstoichiometric silicon oxide (SiO x with x < 2) have been studied extensively during the past few decades because of their importance in many electronic and optoelectronic applications, and particular attention has been paid to models that can better describe their global structure. Herein, we present a detailed study of SiO x films deposited on silicon(111) and silica substrates using the low-pressure chemical vapor deposition (LPCVD) method by thermal oxidation of silane in an oxygen atmosphere at a temperature of 570 °C. The oxygen and silane flows in the reactor were varied to obtain films with different values of oxygen content x. Ellipsometry and m-line measurements were used to determine the complex refractive index of the deposited films. The oxygen contents in the films were measured by infrared spectroscopy, energy-dispersive X-ray spectroscopy (EDX), and time-of-flight elastic recoil detection analysis (TOF-ERDA). The oxygen contents in the films were also estimated from the measured values of the complex refractive indices using Bruggeman's effective-medium aproximation (EMA). All of the results were in good agreement, except for those obtained from infrared spectroscopy, which corresponded to systematically higher oxygen contents. This effect was interpreted as being due to an inhomogeneous distribution of oxygen atoms in the films (phase separation). This issue was confirmed by X-ray photoelectron spectroscopy (XPS) analysis of the Si 2p core levels, which showed an almostcomplete phase separation of the silicon-rich oxides into amorphous silicon and silicon dioxide, indicating that the mixture model is the most appropriate for the present films.

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Section: Introductionmentioning

confidence: 99%

Local Site Distribution of Oxygen in Silicon-Rich Oxide Thin Films: A Tool to Investigate Phase Separation

Ristić¹,

Ivanda

Speranza

et al. 2012

J. Phys. Chem. C

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“…According to their study, the BV increases with the rise of TSIPOS. Meanwhile, the leakage current enlarges [ 27 ]. The simulation results in this paper show no difference with this conclusion.…”

Section: Regionmentioning

confidence: 49%

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

Duan

Xue

Huang

et al. 2021

IEEE J. Electron Devices Soc.

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A novel Si/SiC heterojunction Lateral Doublediffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on Si/SiC MOSFETs. This creative technology improved Breakdown Voltage (BV) of the proposed device, compared with the conventional Si LDMOS (Cov. LDMOS). In order to optimize the trade-off between BV and Specific On-Resistance (RON,SP), the SIPOS field plate is applied on Si/SiC LDMOS for the first time in this paper. At On-State, due to the internal electric field of SIPOS filed plate, the majority carriers accumulation layer is formed on the surface of the drift region for the proposed SIPOS Si/SiC LDMOS, which means RON,SP will be reduced. Meanwhile, the electric field modulation effect of SIPOS field plate can make the surface electric field distribute evenly, which leads to an increase of BV. In addition, due to the high-thermal conductivity of SiC substrate, the heat-dissipation efficiency of the proposed device is significantly improved. The simulation results show that the BV of SIPOS Si/SiC LDMOS is 428.4V, which increased by 78.4% in comparison with Cov. LDMOS (BV of 240.0V) with the same structure parameters. The RON,SP of SIPOS Si/SiC LDMOS is decreased from 33.2mΩ•cm 2 of Cov. LDMOS to 24.0mΩ•cm 2 , decreased by 27.7%. Furthermore, the figure-of-merit (FOM=BV 2 /Ron,sp) of SIPOS Si/SiC LDMOS reaches 7.6MW/cm 2 , which means SIPOS Si/SiC LDMOS has enough performance to break the Silicon limit.

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“…Passivating contacts using polycrystalline Si provide an elegant solution to this problem. Early reports on passivating contacts date back to the 1970s with structures such as semiinsulating polycrystalline Si (SIPOS), first for application in transistors and subsequently for application in photovoltaics . These typically include full‐area thin film stacks that passivate the c ‐Si surface while selectively extracting only one type of charge carrier (ie, either electrons or holes).…”

Section: Introductionmentioning

confidence: 99%

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

Nandakumar

Rodriguez

Kluge

et al. 2018

Progress in Photovoltaics

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We present n‐type bifacial solar cells with a rear interfacial SiOx/n+:poly‐Si passivating contact (‘monoPoly’ cells) where the interfacial oxide and n+:poly‐Si layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. We demonstrate outstanding passivation quality with dark saturation current density (J0) values of approximately 3 fA/cm2 and implied open‐circuit voltage (iVoc) of 730 mV at 1‐sun conditions after firing in an industrial belt furnace. Using a simple solar cell process flow that can be easily adapted for mass production, a peak cell efficiency of 22.8% with a cell open circuit voltage (Voc) of 696 mV is achieved on large‐area, screen‐printed, Czochralski‐silicon (Cz‐Si) solar cells using commercial fire‐through metal pastes.

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Highly reliable high-voltage transistors by use of the SIPOS process

Cited by 111 publications

References 7 publications

Local Site Distribution of Oxygen in Silicon-Rich Oxide Thin Films: A Tool to Investigate Phase Separation

Local Site Distribution of Oxygen in Silicon-Rich Oxide Thin Films: A Tool to Investigate Phase Separation

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

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