Highly reliable and extremely stable SiGe micro-mirrors

Gromova, Maria; Haspeslagh, L.; Verbist, Agnes; Bois, Bert Du; Hoof, R. Van; Eyckens, B.; Sijmus, B.; Wolf, Ingrid De; Simons, V.; Mutter, Patrick; Lauwagie, T.; Willegems, Myriam; Locorotondo, S.; Boullart, Werner; Baert, Kasper; Witvrouw, Ann

doi:10.1109/memsys.2007.4433173

Cited by 10 publications

(6 citation statements)

References 5 publications

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“…Electrostatically actuated polycrystalline silicon germanium (poly-SiGe) torsional square micromirrors which are fabricated on a silicon substrate have been used as a test vehicle to study ESD effects on MEMS devices. SiGe has been previously shown to be a very good material to fabricate reliable and stable micromirrors [8]. A schematic diagram illustrating the operation of the micromirror with and without the actuation voltage is shown in figure 1.…”

Section: Case Study 1-electrostatically Actuated Torsional Sige Micro...mentioning

confidence: 99%

Investigating ESD sensitivity in electrostatic SiGe MEMS

Sangameswaran

Coster

Linten

et al. 2010

J. Micromech. Microeng.

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The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

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Section: Case Study 1-electrostatically Actuated Torsional Sige Micro...mentioning

confidence: 99%

Investigating ESD sensitivity in electrostatic SiGe MEMS

Sangameswaran

Coster

Linten

et al. 2010

J. Micromech. Microeng.

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“…4(b)). A 300nm hydrogenated microcrystalline SiGe film deposited by PECVD [5] is used for the structural layer and to fill the 1 ptm supporting posts in the sacrificial layer. This layer has an optimised strain gradient smaller than 4.104 tm-'.…”

Section: Mems Processingmentioning

confidence: 99%

“…Replacing Al by silicon (Si) solves many of these problems, but, because of the high thermal budget of polySi processing, integrating the Si mirrors with the CMOS driving circuitry can only be accomplished in a hybrid fashion through wafer-or die-bonding [4]. Poly-SiGe offers much better integration possibilities: it can be deposited at temperatures compatible with above-CMOS processing, while it has comparable properties to poly-Si and can be processed using similar state-of-the-art tools [5]. [6].…”

Section: Introductionmentioning

confidence: 99%

Packaging of 11 MPixel CMOS-Integrated SiGe Micro-Mirror Arrays

Witvrouw

Tilmans

Bogaerts

et al. 2009

2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems

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This article reports for the first time on the packaging of 10 cm2 11 MPixel SiGe micro-mirror arrays, intended to be used as spatial light modulator (SLM). Due to very stringent requirements on mounted die flatness (<0.01 mrad), first-level packaging of the SLM die is done using specially designed SiC holders. To avoid trapped particles between die and holder, which would jeopardize the flatness spec, special backside cleaning of the dies (< 1 0.8 tm particle/cm2) is needed before mounting the SLM die on the holder. To enable this backside cleaning and to avoid front-side particles during dicing, handling and wire bonding, a temporary wafer-level or 0-level packaging cap which can be placed and removed at room temperature was developed. Dynamic white light interferometer measurements of packaged dies showed that 99.5°O of 123,648 mirrors tested are within spec.

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“…The functionality of the systems is demonstrated on a monolithically integrated 10cm² 11 megapixel SiGe micromirror array that was developed at IMEC for high-end industrial applications (1,2). Samples 7.7µm x 7.7µm SiGe micro-mirrors were fabricated on top of 0.18 µm HV-analog-CMOS wafers (1,2). The mirrors are actuated through SiGe electrodes, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Functionality, Yield and Reliability Analysis of SiGe Micro-mirrors using Automated Optical Measurement Techniques

Wolf¹,

Coster²,

Pedreira³

et al. 2009

ECS Trans.

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This paper discusses optical systems for automatic, wafer or chip level measurements of metrology, functional yield and reliability of MEMS. The functionality of the systems is demonstrated on megapixel arrays of SiGe micro-mirrors. The back-bone of the systems is formed by existing commercial systems, but home-developed procedures and software were written to extend their functionality and applicability.

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Highly reliable and extremely stable SiGe micro-mirrors

Cited by 10 publications

References 5 publications

Investigating ESD sensitivity in electrostatic SiGe MEMS

Investigating ESD sensitivity in electrostatic SiGe MEMS

Packaging of 11 MPixel CMOS-Integrated SiGe Micro-Mirror Arrays

Functionality, Yield and Reliability Analysis of SiGe Micro-mirrors using Automated Optical Measurement Techniques

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