Highly Air‐Stable Phosphorus‐Doped n‐Type Graphene Field‐Effect Transistors

Abstract

Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

Hierarchical S-doped porous carbon derived from by-product lignin for high-performance supercapacitors

“…[20][21][22] In a recent study, carbon materials have been doped with heteroatoms such as nitrogen, phosphorus, sulfur, and boron via single or dual methods. [23][24][25][26] In particular, sulfur-doped materials with wider band gap have drawn great attention because of the electron-withdrawing property of S.…”

Ab Initio Study of Aluminum-Phosphorus Co-doped Graphene

“…The P atom has valence electrons located in the third shell and smaller ionization energy compared with the N atom, which could enhance doping capability by increasing the fraction of delocalized electrons per atom that allows for a strong n-doping effect compared to N doping [26,27]. On the other hand when graphene is doped with Al the electron density decreases near the doping site as induced by the charge transfer from Al to the surrounding carbon atmos.…”

p‐Element‐Doped Graphene: Heteroatoms for Electrochemical Enhancement

“…Thermal-annealing methods have produced doped graphenes of varying phosphorus levels, ranging from as low as 1.16 at % [22] to as high as 4.96 at % [25] based on XPS analyses. The phosphorus-doped graphenes obtained are usually thin crystalline sheets with at least 3-4 layers, [22] and the best result was monolayers of doped graphene, which was obtained from alginate through pyrolysis, as mentioned above.…”

“…Raman spectroscopy measurements have shown high D/G ratios, which indicate the existence of large numbers of defects. [22,23,25] The doped graphenes were also found to display excellent capabilities for various applications such as NH 3 sensing, [21] electrocatalysts for ORRs, [22,23] photocatalysts for H 2 (g) generation from water, [24] and materials for lithium-ion batteries. [23] This capacity may be attributed to the creation of large numbers of defects during doping, which act as electroactive sites for electrochemical reactions to occur.…”

“…This phenomenon was investigated and proved by Some et al in a comparison study between phosphorus-and nitrogen-doped graphenes. [25] In their investigation, they performed back-gated graphene field-effect transistor (g-FET) measurements on the two types of doped graphenes. The results show that phosphorus-doped graphenes indeed exhibited a much stronger n-type effect than nitrogen-doped graphenes.…”