High voltage silicon power device structure with substrate bias

Abstract

A new high voltage silicon LDMOS structure with substrate bias is reported (SB S-LDMOS). The vertical conduction path is blocked by the double p 2 /n + layer substrate when positive substrate bias is applied to the SB S-LDMOS. The bulk electric field in the drift region redistributes by substrate bias and the vertical voltage sustained by the depletion region under drain decreases significantly, which is especially important for a thin drift region power device. Numerical results indicate that the breakdown voltage of the proposed device is increased by 94% compared to conventional LDMOS, while maintaining low on-resistance.Introduction: One of the most popular high-voltage devices is the lateral double diffused MOS transistor (LDMOS). To be feasibly isolated from low-voltage devices, an LDMOS needs a thin drift region and to satisfy the reduced surface field (RESURF) principle [1]. The recent development of the LDMOS has concentrated on improving the trade-off between breakdown voltage (BV) and on-resistance [2,3]. For the conventional thin drift device the vertical BV is the main element that limits the device's blocking capability. Some techniques have been developed to improve the vertical breakdown characteristic such as the floating buried layer in substrate [4], REBULF technology [5] and silicon on insulator (SOI) [6].

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

“…Considering the area efficiency, the waffle-type structure provides more than 30% higher current handling capability than the conventional ones. Because of its better robustness and area efficiency, the waffle-type structure should be a promising layout for high-voltage ESD protection applications.Introduction: Laterally-diffused metal-oxide-semiconductor (LDMOS) power transistor arrays are widely used as output drivers in highvoltage (HV) circuits such as power management applications, lightemitting diode (LED) and liquid-crystal display (LCD) driver circuits [1,2]. To achieve a high-voltage operation and a high current driven capability, the sizes of LDMOS transistors, typically with widths over 10000 mm, are much larger than those of other CMOS devices.…”

“…Introduction: Laterally-diffused metal-oxide-semiconductor (LDMOS) power transistor arrays are widely used as output drivers in highvoltage (HV) circuits such as power management applications, lightemitting diode (LED) and liquid-crystal display (LCD) driver circuits [1,2]. To achieve a high-voltage operation and a high current driven capability, the sizes of LDMOS transistors, typically with widths over 10000 mm, are much larger than those of other CMOS devices.…”