High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Orouji, Ali A.; Jozi, Mohammad; Fathipour, Morteza

doi:10.1016/j.mssp.2015.06.006

Cited by 10 publications

(5 citation statements)

References 18 publications

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“…Moreover, in the super-junction (SJ) MOSFET structure, the charge balance between the n-pillar and p-pillar must be precisely controlled. Thus, the products of the width and doping concentration of the n-pillar region of the two structures must equal to the product of the width and doping concentration of the p-pillar region the according to [16,17,28,29]…”

Section: Description Of the Device Structure And Fabrication Proceduresmentioning

confidence: 99%

“…With charge-balanced npillar and p-pillar, the super-junction (SJ) MOSFET has more superior electrical characteristics compared with conventional SiC trench MOSFET. [16][17][18][19][20] Vudumula et al [16] studied the static and dynamic characteristics of the CoolSiC trench MOS-FET structure by introducing the concept of super-junction, and the structure provides a good trade-off between gate oxide reliability and R on,sp . Orouji et al [17] proposed to replace the p+ shield region with an n-type pillar and a p-type pillar at the bottom of the gate trench.…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18][19][20] Vudumula et al [16] studied the static and dynamic characteristics of the CoolSiC trench MOS-FET structure by introducing the concept of super-junction, and the structure provides a good trade-off between gate oxide reliability and R on,sp . Orouji et al [17] proposed to replace the p+ shield region with an n-type pillar and a p-type pillar at the bottom of the gate trench. The new device structure improves the V BR and reduces the R on,sp , and has good switching characteristics.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

2022

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In this article, an optimized silicon carbide (SiC) trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) structure with side-wall p-type pillar (p-pillar) and wrap n-type pillar (n-pillar) in the n-drain was investigated utilizing Silvaco TCAD simulations. The optimized structure main includes a p+ buried region, a light n-type current spreading layer (CSL), a p-type pillar region, and a wrapping n-type pillar region at the right and bottom of the p-pillar. The improved structure is named SNPPT-MOS. The side-wall p-pillar region could better relieve the high electric field around the p+ shielding region and the gate oxide in the off-state mode. The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance (R on,sp). As a result, the SNPPT-MOS structure exhibits that a higher figure of merit (FoM) related to the breakdown voltage (V BR) and the R on,sp (V BR 2/R on,sp) of the SNPPT-MOS is improved by 44.5%, respectively, with comparison to that of the conventional trench gate SJ MOSFET (full-SJ-MOS). In addition, the SNPPT-MOS structure achieves a much faster-switching speed than the full-SJ-MOS, and the result indicated an appreciable reduction in the switching energy loss.

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Section: Description Of the Device Structure And Fabrication Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

2022

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“…Moreover, based on the existing literature, there are two domination ways used to improve the device’s performances. One is to adopt a new structure [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], with a mechanism that reduces the JFET resistance. The other is adopting a new fabrication process for the gate oxide [ 19 , 20 , 21 , 22 , 23 , 24 , 25 ], which increases the channel’s electron mobility to achieve a reduction in the resistance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

et al. 2022

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In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

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“…In order to achieve a better trade-off between specific on-resistance and avalanche voltage, a super-junction is a new structure, which improves the trade-off between specific on-resistance and avalanche voltage, and enables the low specific on-resistance in the industrial silicon power MOSFET. [10][11][12] Orouji et al [13] studied the unique features that were exhibited by power in the 4H-SiC UMOSFET, where the n-and p-type columns in the drift region were incorporated in order to improve the breakdown voltage, on-resistance. In order to achieve lower on-resistance and better switching performance, Deng et al [14] investigated a device structure that had a built-in floating component.…”

Section: Introductionmentioning

confidence: 99%

Improved 4H-SiC UMOSFET with super-junction shield region*

Shen

Wang

et al. 2021

Chinese Phys. B

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This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance (R on,sp). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field (E-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that R on,sp of the modified structure, and breakdown voltage (V BR) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit ( FOM = V BR 2 / R on , sp ) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge (Q gd) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the V BR of the device without degradation of dynamic performance.

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High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Cited by 10 publications

References 18 publications

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Improved 4H-SiC UMOSFET with super-junction shield region*

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