Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Abstract

In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.