High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

“…Recently we have demonstrated tri-anode AlGaN/GaN SBDs with small IR (≤ 0.1 µA/mm at -700 V) [1]. Small IR was also reported by J. Hu et al [7] using a gated-edge termination, in which the AlGaN barrier in the FP was partially recessed.…”

“…To demonstrate the dependence of the IR with the |Vp|, we studied tri-anode SBDs [1], since their |Vp| can be reduced by decreasing the w of the tri-anode (which are basically tri-gate HEMTs without the oxide). Figure 3(a) shows the IR of trianode AlGaN/GaN SBDs with different w, thus different Vp, which follow a similar exponential increase before the pinch off of their FPs and then saturate as V reaches Vp.…”

“…Here we used a tri-gate structure to reduce the |Vp| [29], [30], as it offers great control to tune the Vp by changing the width of the nanowires (w) in the tri-gate. We implemented tri-gate FPs in SBDs for both conventional recessed anodes and novel tri-anodes [1] to justify our approach, and compared them with other literature results to show the generality of the model.…”

“…ateral AlGaN/GaN SBDs are very promising for power conversions, offering excellent properties for high-voltage, high-power-density and high-frequency operation [1]- [10]. In addition, these devices can be monolithically integrated with GaN high electron mobility transistors (HEMTs) on large-size silicon substrates, which is highly desirable to reduce the cost, size and parasitics for future GaN power converters.…”

Slanted Tri-Gates for High-Voltage GaN Power Devices

“…3(c), a single tri-gate, as we demonstrated recently in Refs. [16,18], can easily evolve into multiple tri-gates, and ultimately into a slanted tri-gate, by simply tuning the w via lithography.…”