“…ateral AlGaN/GaN SBDs are very promising for power conversions, offering excellent properties for high-voltage, high-power-density and high-frequency operation [1]- [10]. In addition, these devices can be monolithically integrated with GaN high electron mobility transistors (HEMTs) on large-size silicon substrates, which is highly desirable to reduce the cost, size and parasitics for future GaN power converters.…”