Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

Ma, Jun; Zanuz, Dante Colao; Matioli, Elison

doi:10.1109/led.2017.2734644

Cited by 29 publications

(27 citation statements)

References 29 publications

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“…The RB-MOSHEMTs presented the smallest IR because their VSCH was pinned at a small bias of ~2.3 V, determined by the pinch-off of the tri-anode region, regardless of the increase in reverse bias. This makes the IR saturate at a small level instead of increasing exponentially with voltage [13]. The high % B R obtained in this work is attributed to the better-distributed electric field under reverse biases.…”

Section: Resultsmentioning

confidence: 64%

“…1(e)) forms a direct Schottky contact to the 2DEG and leads to a small VON [15,16]. In OFFstate, VSCH is pinned at the |Vp| of the tri-anode region, which can be very small due to the elastic relaxation of the AlGaN/GaN nanowires [17], [18] and additional electrostatic control from the sidewall metals [19]- [28], resulting in a small IR [13]- [14]. The tri-gate region ( Fig.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…Recently we have shown that the poor reverse blocking in lateral AlGaN/GaN SBDs could be addressed by pinning the reverse voltage drop at the Schottky junction (VSCH) at small levels [13]. This was demonstrated with a hybrid of tri-gate and tri-anode architectures, which allows a precise control over the pinch-off voltage (Vp) of the tri-gate/tri-anode regions to engineer the VSCH, resulting in GaN-on-Si SBDs with …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

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Section: Resultsmentioning

confidence: 64%

Section: Device Design and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

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“…The tri-anode (TA) was designed for small V ON 8,14 and low I R . 15 In ON state, the metal contacts the 2DEG directly at the sidewalls and hence leads to a small V ON . In OFF state, when the voltage is below the V p of the tri-anode (V p,TA ), the V SCH is pinned at jV p,TA j [ Fig.…”

mentioning

confidence: 99%

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Matioli

2018

Applied Physics Letters

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This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted trigate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (V SCH), despite a large applied reverse bias, fixing the reverse leakage current (I R) of the SBD. Such architecture led to an ultra-low I R of 51 6 5.9 nA/mm at À1000 V, in addition to a small turnon voltage (V ON) of 0.61 6 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (V BR) of À2000 V at 1 lA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the I R and increases the V BR without sacrificing the V ON , which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

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“…The gate-to-source (L GS ) and gate-to-drain (L GD ) lengths were 1.5 lm. enhanced by reducing w,[23][24][25] leading to much improved V TH and SS [Fig. 3(b)].…”

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confidence: 99%

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Erine

Peng

et al. 2018

Applied Physics Letters

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In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure with multiple AlGaN/GaN layers was used to form five parallel two-dimensional-electron-gas (2DEG) channels to reduce the ON-resistance (R ON ), simultaneously modulated by the 3-dimensional trigate electrodes. The tri-gate is a unique technology to control the multi-channels, providing enhanced electrostatics and device performance, and, in turn, the multi-channels are exceptionally suited to address the degradation in drain current (I D,max ) caused by the tri-gate. With a tri-gate width (w) of 100 nm, normally-on multi-channel tri-gate transistors presented 3Â-higher maximum drain current (I D,max ), 47%-smaller R ON , as well as 79%-higher maximum transconductance (g m,max ), as compared to counterpart single-channel devices. Using the channel depletion through the tri-gate sidewalls, normally-off operation was also achieved by reducing w below the sidewall depletion width (w dep ), resulting in a positive threshold voltage (V TH ) of 0.82 V at 1 lA/mm. The devices presented a high breakdown voltage (V BR ) of 715 V, which reveals a promising future platform for high-voltage low-R ON GaN transistors. Published by AIP Publishing.

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Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

Cited by 29 publications

References 29 publications

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

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