2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Ma, Jun; Matioli, Elison

doi:10.1063/1.5012866

Cited by 48 publications

(30 citation statements)

References 22 publications

(25 reference statements)

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“…The RC-MOSHEMTs also presented small I OFF and high ON/OFF ratio, which were identical to the reference devices (Fig. 2(b)), due to the small reverse leakage current of the hybrid tri-anode SBDs [13], [15], [19].…”

Section: Resultssupporting

confidence: 54%

“…The V BR of tri-anode RC-MOSHEMT was 1040 V, which is close to that of the reference MOSHEMT (tri-gate MOSHEMT with L GD = 15 μm) and significantly improved as compared to the planar RC-MOSHEMT (planar MOSHEMT with planar SBDs, and L GD of 20 μm). Such enhancement in V BR is attributed to the better leakage control capability of integrated tri-anode SBDs [15], [19]- [21]. In addition, a very small I OFF of 0.6 μA/mm at 650 V was observed for the tri-anode RC-MOSHEMTs, which is due to the reduced voltage drop at the Schottky junction in the hybrid tri-anode SBDs [15], [19].…”

Section: Resultsmentioning

confidence: 96%

“…Such enhancement in V BR is attributed to the better leakage control capability of integrated tri-anode SBDs [15], [19]- [21]. In addition, a very small I OFF of 0.6 μA/mm at 650 V was observed for the tri-anode RC-MOSHEMTs, which is due to the reduced voltage drop at the Schottky junction in the hybrid tri-anode SBDs [15], [19]. With floating substrate, the V BR of the RC-MOSHEMTs was as high as 1150 V at 1 μA/mm, and the hard breakdown (HBD) did not occur until 1800 V due to better-distributed electric field of tri-gate MOSHEMTs [14], [15].…”

Section: Resultsmentioning

confidence: 99%

“…Alternatively, we have recently shown the outstanding potential of tri-anode SBDs [13] with small V ON , high V BR and ultra-low leakage current for high-performance and highvoltage GaN power SBDs [14], [15] and reverse-blocking transistors [16]. In this work, we demonstrate RC-MOSHEMT with integrated tri-anode SBDs as freewheeling diodes using a relatively simple process.…”

Section: Introductionmentioning

confidence: 97%

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1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang

Matioli

2018

IEEE Electron Device Lett.

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In this letter, we present high-performance reverse-conduction GaN-on-Si metal-oxide-semiconductor high-electron-mobility transistors (RC-MOSHEMTs) with integrated tri-anode freewheeling diodes. Tri-anode Schottky barrier diode presenting small turn-ON voltage (V ON), ultra-low reverse leakage current, and high breakdown voltage (V BR) was incorporated at portions of the drift region of AlGaN/GaN MOSHEMTs as freewheeling diodes. The tri-anode RC-MOSHEMTs exhibited outstanding reverseconduction performance with a small V ON of 0.55 V, along with a high V BR of 1150 V, state-of-the-art low ON-resistance (R ON) of 8.83 • mm, and high-power figureof-merit (FOM = V BR 2 /R ON,SP) of 1.32 GW/cm 2. These results reveal the potential of the tri-gate/tri-anode technology for future integrated power electronic devices.

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

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1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang

Matioli

2018

IEEE Electron Device Lett.

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“…The gate-to-source (L GS ) and gate-to-drain (L GD ) lengths were 1.5 lm. enhanced by reducing w,[23][24][25] leading to much improved V TH and SS [Fig. 3(b)].…”

mentioning

confidence: 99%

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Erine

Peng

et al. 2018

Applied Physics Letters

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In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure with multiple AlGaN/GaN layers was used to form five parallel two-dimensional-electron-gas (2DEG) channels to reduce the ON-resistance (R ON ), simultaneously modulated by the 3-dimensional trigate electrodes. The tri-gate is a unique technology to control the multi-channels, providing enhanced electrostatics and device performance, and, in turn, the multi-channels are exceptionally suited to address the degradation in drain current (I D,max ) caused by the tri-gate. With a tri-gate width (w) of 100 nm, normally-on multi-channel tri-gate transistors presented 3Â-higher maximum drain current (I D,max ), 47%-smaller R ON , as well as 79%-higher maximum transconductance (g m,max ), as compared to counterpart single-channel devices. Using the channel depletion through the tri-gate sidewalls, normally-off operation was also achieved by reducing w below the sidewall depletion width (w dep ), resulting in a positive threshold voltage (V TH ) of 0.82 V at 1 lA/mm. The devices presented a high breakdown voltage (V BR ) of 715 V, which reveals a promising future platform for high-voltage low-R ON GaN transistors. Published by AIP Publishing.

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Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Tesfay

Seong

et al. 2019

ACS Appl. Mater. Interfaces

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Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavior in a high-temperature epitaxy. The damaged GI, like nanographite as a solid-state carbon doping source, incorporated the epitaxial growth of the GaN layer. The secondary ion mass spectroscopy depth profile indicated that the carbon content in the GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL because of the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. The edge-type threading dislocation density and carbon concentration of the GaN:C layer with an embedded 550 °C-grown AlN CL on a GI substrate can be significantly reduced to 2.28 × 109 cm–2 and ∼2.88 × 1018 cm–3, respectively. Thus, a Ni-based Schottky diode with an ideality factor of 1.5 and a barrier height of 0.72 eV was realized on GaN:C. The series resistance increased from 28 kΩ at 303 K to 113 kΩ at 473 K, while the positive temperature coefficient (PTC) of series resistance was ascribed to the carbon doping that induced the compensation effect and lattice scattering effect. The decrease of the donor concentration was confirmed by temperature-dependent capacitance–voltage (C–V–T) measurement. The PTC characteristic of GaN:C Schottky diodes created by dissociating the GI as a carbon doping source should allow for the future use of high-voltage Schottky diodes in parallel, especially in high-temperature environments.

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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Cited by 48 publications

References 22 publications

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

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