Slanted Tri-Gates for High-Voltage GaN Power Devices

Ma, Jun; Matioli, Elison

doi:10.1109/led.2017.2731799

Cited by 59 publications

(50 citation statements)

References 18 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the hybrid tri-anode drain, two field plates, e.g. the planar and the tri-gate regions, are integrated with the tri-anode, by simply engineering their pinch-off voltages with the tri-gate approach, which spread effectively the electric field and improved the % B R [29,30]. We benchmarked our devices against state-of-the-art discrete GaN-on-silicon power MOSHEMTs and SBDs in Fig.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

“…The tri-gate region ( Fig. 1(d)) works as tri-gated FPs to shield the tri-anode region from high voltages, which along with the planar FP improves the % B R [14], [29], [30].…”

Section: Device Design and Fabricationmentioning

confidence: 99%

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

“…To date, the majority of the research has been directed towards lateral high electron mobility transistors (HEMTs) based on an AlGaN/GaN heterostructure [1]- [3]. This is due to the advantages offered by the high-density and high-mobility two-dimensional electron gas (2DEG) induced at the hetero-interface, which allow high-voltage devices with large switching speeds and reduced on-resistances.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, GaN-on-Si technology has been developed extensively for several different areas, such as high-brightness light emitting diodes [21], high-power lateral HEMTs [2], [3], [22] and high-power vertical diodes [23]- [28]. However, there have been no reports up-to-date on GaN-on-Si vertical transistors, due to the challenge in obtaining high-quality n-p-n GaN heterostructures on silicon substrates.…”

Section: Introductionmentioning

confidence: 99%

GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

Abstract-We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical vapor deposition (MOCVD). The devices consist of trench-gate quasi-vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 4 μm-thick drift layer, exhibiting enhancement-mode (E-mode) operation with a threshold voltage of 6.3 V and an on/off ratio of over 10 8 . A high off-state breakdown voltage of 645 V along with a specific on-resistance of 6.8 mΩ•cm 2 were achieved thanks to the high-quality 4 μm-thick GaN drift layer presenting a relatively low defect density and very high electron mobility (720 cm 2 /V•s). This excellent performance represents a major step towards the realization of high-performance GaN vertical power transistors on low-cost silicon substrates.

show abstract

“…The gate-to-source (L GS ) and gate-to-drain (L GD ) lengths were 1.5 lm. enhanced by reducing w,[23][24][25] leading to much improved V TH and SS [Fig. 3(b)].…”

mentioning

confidence: 99%

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Erine

Peng

et al. 2018

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure with multiple AlGaN/GaN layers was used to form five parallel two-dimensional-electron-gas (2DEG) channels to reduce the ON-resistance (R ON ), simultaneously modulated by the 3-dimensional trigate electrodes. The tri-gate is a unique technology to control the multi-channels, providing enhanced electrostatics and device performance, and, in turn, the multi-channels are exceptionally suited to address the degradation in drain current (I D,max ) caused by the tri-gate. With a tri-gate width (w) of 100 nm, normally-on multi-channel tri-gate transistors presented 3Â-higher maximum drain current (I D,max ), 47%-smaller R ON , as well as 79%-higher maximum transconductance (g m,max ), as compared to counterpart single-channel devices. Using the channel depletion through the tri-gate sidewalls, normally-off operation was also achieved by reducing w below the sidewall depletion width (w dep ), resulting in a positive threshold voltage (V TH ) of 0.82 V at 1 lA/mm. The devices presented a high breakdown voltage (V BR ) of 715 V, which reveals a promising future platform for high-voltage low-R ON GaN transistors. Published by AIP Publishing.

show abstract

Slanted Tri-Gates for High-Voltage GaN Power Devices

Cited by 59 publications

References 18 publications

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

GaN-on-Si Quasi-Vertical Power MOSFETs

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Contact Info

Product

Resources

About