Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

“…Many results of design and production of GaN Schottky barrier diodes (SBDs) have been presented [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28].…”

“…Many results of design and production of GaN Schottky barrier diodes (SBDs) have been presented [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28]. To date, quite a lot of design features have been reported regarding SBDs, and most of reported results have used field plates for efficient electric field redistribution between anode and cathode, and increasing the diode's breakdown voltage (V BR ) [16]; increasing anode-to-cathode distance leads to an increase in the diode's resistance in the ON-state (R ON ) and V BR [29].…”

“…Despite this, there are some claims reported which bring some uncertainty, such as regarding the depth of subanode recess and material of the cap layer. In works [18,19], Pt was used as the Schottky barrier metal, which resulted in V ON = 0.43-0.7 V and reverse current around I R = 10 −10 A/mm at V R = −200 V. In works [15][16][17][20][21][22][23], Ni was used as the Schottky barrier metal, which resulted in V ON = 0.37-0.5 V and reverse current around I R = 10 −6 A/mm at V R = −200 V. In [30], authors reported on the performance of dual-barrier InAlN/AlGaN/GaN HEMTS on silicon substrates with Pt-and Ni-based gates. Authors reported that Pt-based gates showed an overall improvement in gate leakage by 2-3 orders of magnitude.…”

“…Despite the fact that all the solutions are considered to be reliable and working, there is no clear understanding of which SC material would provide lower V ON , I r and R on of a diode manufactured on RF fab. In works [15][16][17]20], authors claimed that a 5 nm-thickness AlGaN barrier layer was most optimal subanode recess depth, while in works [18,19,[21][22][23], the authors claim that overetching of the barrier layer is the most optimal subanode recess. In work [24], SBDs with SiN as the cap layer demonstrated 15 times lower reverse leakage currents compared with samples with a GaN+SiN cap layer.…”

“…In work [24], SBDs with SiN as the cap layer demonstrated 15 times lower reverse leakage currents compared with samples with a GaN+SiN cap layer. In works [15][16][17][20][21][22][23], authors use epitaxial structures with GaN as the cap layer, while in [19], in situ SiN is used as the cap layer. To our knowledge, no direct comparison of SiN and GaN caps on the electrical performance of GaN SBDs has been carried out so far.…”