High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Chiu, Hsien‐Chin; Chang, Yi-Sheng; Li, B. H.; Wang, Hsiang-Chun; Kao, Hsuan‐Ling; Chien, Feng-Tso; Hu, Chih‐Wei; Xuan, Rong

doi:10.1109/ted.2018.2871689

Cited by 39 publications

(31 citation statements)

References 20 publications

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“…Traditionally, the simple and less accurate method to etch p-GaN has been the dry-etching method, which involves the use of chloride-based chemicals including BCl 3 and Cl 2 . 63 This method removes the p-GaN layer depending on the time duration of material exposure. However, the exact duration varies with the specific device structure and the quality of the material layer while leaving a rough texture at the over-etched AlGaN surface.…”

Section: Fabrication Processmentioning

confidence: 99%

“…This process is repeated until the appropriate depth is reached or when the stop layer comprised of AlN turns into Al 2 O 3 , a stable material that will not be dissolved in the presence of HCl. 63 Moreover, the conventional etchant can be replaced with a Cl 2 + N 2 + O 2 -based mixture to form an inactive oxide layer at the AlGaN surface. The standard timed RIE procedure is used to etch the p-GaN material with the new etchant mixed in the plasma gas.…”

Section: Fabrication Processmentioning

confidence: 99%

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Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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Section: Fabrication Processmentioning

confidence: 99%

Section: Fabrication Processmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Then they obtained a better uniformity of V th compared with the conventional structure. The standard deviation of V th from the devices with AlN stop layer was about 0.06 V, whereas the data from the traditional ones was 0.2 V. Moreover, they further employed N 2 O as the oxidant [71] with the same AlN stop layer and achieved further improved uniformity. The p-GaN was oxidized to Ga 2 O 3 by N 2 O plasma and then the Ga 2 O 3 was removed using HCl solution in one cycle.…”

Section: P-gan Gate Formationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…The PL experiment was carried out to investigate the deep emissions and self-compensation at various doped Mg levels. In addition, Hsien-Chin Chiu et al demonstrated that a thin AlN etch stop layer in the p-GaN/AlN/AlGaN/GaN HEMT structure can effectively improve the device R ON uniformity and reduce the leakage current [ 23 , 24 ]. Thus, the influence of a thick GaN and thin AlN interlayer (IL) at the interface of the Mg-doped p-GaN and AlGaN layer on the activation efficiency and Mg diffusion was also investigated in this study.…”

Section: Introductionmentioning

confidence: 99%

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Dai

Thu

et al. 2021

Nanomaterials

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The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

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High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Cited by 39 publications

References 20 publications

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

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