Pure and Au-decorated sub-micrometer ZnO spheres were successfully grown on glass substrates by simple chemical bath deposition and photoreduction methods. The analysis of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images, energy-dispersive X-ray spectroscopy (EDS), UV–vis absorption, and photoluminescence (PL) spectra results were used to verify the incorporation of plasmonic Au nanoparticles (NPs) on the ZnO film. Time-resolved photoluminescence (TRPL) spectra indicated that a surface plasmonic effect exists with a fast rate of charge transfer from Au nanoparticles to the sub-micrometer ZnO sphere, which suggested the strong possibility of the use of the material for the design of efficient catalytic devices. The NO2 sensing ability of as-deposited ZnO films was investigated with different gas concentrations at an optimized sensing temperature of 120 °C. Surface decoration of plasmonic Au nanoparticles provided an enhanced sensitivity (141 times) with improved response (τRes = 9 s) and recovery time (τRec = 39 s). The enhanced gas sensing performance and photocatalytic degradation processes are suggested to be attributed to not only the surface plasmon resonance effect, but also due to a Schottky barrier between plasmonic Au and ZnO structures.

In this paper, research on a CO catalytic gas sensor based on nano-crystalline perovskite oxide NdFeO 3 designed for exhaust gas measurement is presented. Nano-crystalline oxide NdFeO 3 was synthesized by a sol–gel citrate technique. The gas sensing characteristics of this sensor were investigated in the concentration range of CO between 0 and 5 vol.% in air. The influences of C 3 H 8, C 4 H 16 gases, relative humidity and air-flow rate on the cross-sensitivity of the CO sensor were also studied.

No abstract

The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the impact of SiH4 flow rate on two-dimensional electron gas (2DEG) properties was comprehensively investigated, where an increase in SiH4 flow rate resulted in a decrease in edge-type threading dislocation density during coalescence process and an improvement of 2DEG electronic properties. The study also reveals that controlling the SiH4 flow rate of the SiNx nano-mask grown at low temperatures in a short time is an effective strategy to overcome the surface desorption issue that causes surface roughness degradation. The highest electron mobility of 1970 cm2/V·s and sheet carrier concentration of 6.42 × 1012 cm−2 can be achieved via an optimized SiH4 flow rate of 50 sccm.

Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies.