High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors

Arnold, E.; Letavic, T.; Merchant, S.; Bhimnathwala, H.

doi:10.1109/ispsd.1996.509456

Cited by 17 publications

(24 citation statements)

References 13 publications

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“…7.25 shows the reverse log J vs. V of a 4H-SiC, 1100V, Al/C/B-implanted pin junction rectifier Chow 119 . At high reverse bias, some of the SiC junction rectifiers show an increase in reverse current ) that resembles a band-to-band tunneling characteristic, which has been observed in Si on insulator (Arnold, et al 1996). In another case, a space-charge-limited current flow mechanism due to deep traps is also used to explain the dependence of the reverse current on reverse bias (J R ~ V R°, where 2 < n <5) .…”

Section: Chow 117mentioning

confidence: 90%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Section: Chow 117mentioning

confidence: 90%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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“…Isolating the terms in (2), it is concluded that the predominance of J RTH from J RD in JTPR and LJPR, respectively, is the reason for the different J R (T ) evolution. Indeed, this effect has already been denoted, comparing bulk with thin-film silicon-on-insulator (TF-SOI) power devices [6]. Like in TF-SOI power devices, J RD vanishes when the JTPR drift volume is completely depleted, thus giving a less pronounced J R (T ) rise (56 • C/decade) than that in LJPR (25 • C/decade).…”

Section: B Reverse Characteristicsmentioning

confidence: 97%

Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications

Roig

Jordán

Desoete

et al. 2009

IEEE Electron Device Lett.

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Trench-based power rectifiers with optimized electrical performance are presented in this letter in order to cover high-temperature applications and high-voltage capabilities ranging from 70 to 100 V. A three-step epitaxial layer substantially improves forward, reverse, and dynamic recovery characteristics up to 200 • C, exhibiting considerable advantages over conventional planar rectifiers.Index Terms-High temperature, power diode, power rectifier, recovery speed.

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“…The physical structure of the two active regions of the devices were initially identical, each 42 μm-long, 0.2 μm-thick and with the same "IOS" layout that sees the gate contact extend over a thick field oxide over the drift region. These are based on SOI devices originally developed by Philips in the 1990s [20]. Despite their identical origins, for both devices to support the same blocking voltage (600 V) the linear doping used in the Si/SiC had to be half that of the SOI doping.…”

Section: The Si/sic Conceptmentioning

confidence: 99%

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

et al. 2017

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A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metaloxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

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High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors

Cited by 17 publications

References 13 publications

High-Temperature Electronics in Europe

High-Temperature Electronics in Europe

Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

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